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NTMSD3P102R2_06

更新时间： 2024-11-18 03:28:11
品牌 Logo 应用领域
安森美 - ONSEMI 肖特基二极管
页数 文件大小 规格书
9页 179K
描述
P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual Dual SO-8 Package

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NTMSD3P102R2_06 数据手册

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NTMSD3P102R2  
FETKY™  
P−Channel Enhancement−Mode  
Power MOSFET and Schottky Diode  
Dual SO−8 Package  
Features  
• High Efficiency Components in a Single SO−8 Package  
http://onsemi.com  
• High Density Power MOSFET with Low RDS(on)  
,
Schottky Diode with Low VF  
MOSFET  
−3.05 AMPERES  
−20 VOLTS  
• Independent Pin−Outs for MOSFET and Schottky Die  
Allowing for Flexibility in Application Use  
• Less Component Placement for Board Space Savings  
0.085 W @ V = −10 V  
GS  
• SO−8 Surface Mount Package,  
Mounting Information for SO−8 Package Provided  
SCHOTTKY DIODE  
1.0 AMPERE  
20 VOLTS  
• Pb−Free Packages are Available  
Applications  
• DC−DC Converters  
470 mV @ I = 1.0 A  
F
• Low Voltage Motor Control  
• Power Management in Portable and Battery−Powered Products,  
1
2
8
7
i.e.: Computers, Printers, PCMCIA Cards, Cellular and Cordless Telephones  
A
A
S
G
C
C
D
D
MOSFET MAXIMUM RATINGS (T = 25°C unless otherwise noted).  
J
6
Rating  
Symbol Value  
Unit  
V
3
Drain−to−Source Voltage  
V
−20  
DSS  
4
5
Gate−to−Source Voltage − Continuous  
V
"20  
V
GS  
(TOP VIEW)  
Thermal Resistance −  
Junction−to−Ambient (Note 1)  
R
171  
0.73  
−2.34  
−1.87  
−8.0  
°C/W  
W
q
P
D
D
D
JA  
MARKING DIAGRAM &  
PIN ASSIGNMENT  
Total Power Dissipation @ T = 25°C  
A
Continuous Drain Current @ T = 25°C  
I
A
A
Continuous Drain Current @ T = 70°C  
I
A
A
A
C
C
D
D
Pulsed Drain Current (Note 4)  
I
DM  
8
1
8
Thermal Resistance −  
E3P1xx  
AYWW G  
G
1
Junction−to−Ambient (Note 2)  
R
100  
1.25  
−3.05  
−2.44  
−12  
°C/W  
W
q
P
JA  
D
D
D
Total Power Dissipation @ T = 25°C  
A
SO−8  
Continuous Drain Current @ T = 25°C  
I
I
A
A
CASE 751  
STYLE 18  
Continuous Drain Current @ T = 70°C  
A
A
Pulsed Drain Current (Note 4)  
I
A
DM  
A
A
S
G
Thermal Resistance −  
E3P1 = Device Code  
Junction−to−Ambient (Note 3)  
R
q
62.5  
2.0  
−3.86  
−3.10  
−15  
°C/W  
W
JA  
D
D
D
xx  
A
Y
WW  
G
= 02 or S  
= Assembly Location  
= Year  
= Work Week  
= Pb−Free Package  
Total Power Dissipation @ T = 25°C  
P
I
A
Continuous Drain Current @ T = 25°C  
A
A
Continuous Drain Current @ T = 70°C  
I
A
A
Pulsed Drain Current (Note 4)  
I
A
DM  
Operating and Storage Temperature Range  
T , T  
J
−55 to  
+150  
°C  
stg  
(Note: Microdot may be in either location)  
Single Pulse Drain−to−Source Avalanche  
E
140  
mJ  
AS  
Energy − Starting T = 25°C  
J
ORDERING INFORMATION  
(V = −20 Vdc, V = −4.5 Vdc,  
DD  
GS  
Peak I = −7.5 Apk, L = 5 mH, R = 25 W)  
L
G
†
Device  
Package  
Shipping  
Maximum Lead Temperature for Soldering  
T
260  
°C  
L
Purposes, 1/8″ from case for 10 seconds  
NTMSD3P102R2  
SO−8  
2500/Tape & Reel  
2500/Tape & Reel  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Minimum FR−4 or G−10 PCB, Steady State.  
NTMSD3P102R2G  
SO−8  
(Pb−Free)  
NTMSD3P102R2SG  
SO−8  
(Pb−Free)  
2500/Tape & Reel  
2. Mounted onto a 2″ square FR−4 Board (1 in sq, 2 oz Cu 0.06″ thick  
single−sided), Steady State.  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
3. Mounted onto a 2″ square FR−4 Board (1 in sq, 2 oz Cu 0.06″ thick single  
sided), t ≤ 10 seconds.  
4. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
March, 2006 − Rev. 2  
NTMSD3P102R2/D  
1234567...9

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