Datasheet > NTMSD3P102R2_06

NTMSD3P102R2_06

更新时间： 2024-02-14 21:45:13

品牌	Logo	应用领域
安森美 - ONSEMI		肖特基二极管
页数	文件大小	规格书
9页	179K
描述
P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual Dual SO-8 Package

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NTMSD3P102R2_06 数据手册

NTMSD3P102R2

FETKY™

P−Channel Enhancement−Mode

Power MOSFET and Schottky Diode

Dual SO−8 Package

Features

• High Efficiency Components in a Single SO−8 Package

http://onsemi.com

• High Density Power MOSFET with Low R_DS(on)

Schottky Diode with Low V_F

MOSFET

−3.05 AMPERES

−20 VOLTS

• Independent Pin−Outs for MOSFET and Schottky Die

Allowing for Flexibility in Application Use

• Less Component Placement for Board Space Savings

0.085 W @ V = −10 V

• SO−8 Surface Mount Package,

Mounting Information for SO−8 Package Provided

SCHOTTKY DIODE

1.0 AMPERE

20 VOLTS

• Pb−Free Packages are Available

Applications

• DC−DC Converters

470 mV @ I = 1.0 A

• Low Voltage Motor Control

• Power Management in Portable and Battery−Powered Products,

i.e.: Computers, Printers, PCMCIA Cards, Cellular and Cordless Telephones

MOSFET MAXIMUM RATINGS (T = 25°C unless otherwise noted).

Rating

Symbol Value

Unit

Drain−to−Source Voltage

−20

DSS

Gate−to−Source Voltage − Continuous

"20

(TOP VIEW)

Thermal Resistance −

Junction−to−Ambient (Note 1)

171

0.73

−2.34

−1.87

−8.0

°C/W

MARKING DIAGRAM &

PIN ASSIGNMENT

Total Power Dissipation @ T = 25°C

Continuous Drain Current @ T = 25°C

Continuous Drain Current @ T = 70°C

Pulsed Drain Current (Note 4)

Thermal Resistance −

E3P1xx

AYWW G

Junction−to−Ambient (Note 2)

100

1.25

−3.05

−2.44

−12

°C/W

Total Power Dissipation @ T = 25°C

SO−8

Continuous Drain Current @ T = 25°C

CASE 751

STYLE 18

Continuous Drain Current @ T = 70°C

Pulsed Drain Current (Note 4)

Thermal Resistance −

E3P1 = Device Code

Junction−to−Ambient (Note 3)

62.5

2.0

−3.86

−3.10

−15

°C/W

= 02 or S

= Assembly Location

= Year

= Work Week

= Pb−Free Package

Total Power Dissipation @ T = 25°C

Continuous Drain Current @ T = 25°C

Continuous Drain Current @ T = 70°C

Pulsed Drain Current (Note 4)

Operating and Storage Temperature Range

T , T

−55 to

+150

°C

stg

(Note: Microdot may be in either location)

Single Pulse Drain−to−Source Avalanche

140

Energy − Starting T = 25°C

ORDERING INFORMATION

(V = −20 Vdc, V = −4.5 Vdc,

Peak I = −7.5 Apk, L = 5 mH, R = 25 W)

†

Device

Package

Shipping

Maximum Lead Temperature for Soldering

260

°C

Purposes, 1/8″ from case for 10 seconds

NTMSD3P102R2

SO−8

2500/Tape & Reel

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Minimum FR−4 or G−10 PCB, Steady State.

NTMSD3P102R2G

SO−8

(Pb−Free)

NTMSD3P102R2SG

SO−8

(Pb−Free)

2500/Tape & Reel

2. Mounted onto a 2″ square FR−4 Board (1 in sq, 2 oz Cu 0.06″ thick

single−sided), Steady State.

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

3. Mounted onto a 2″ square FR−4 Board (1 in sq, 2 oz Cu 0.06″ thick single

sided), t ≤ 10 seconds.

4. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%.

Semiconductor Components Industries, LLC, 2006

Publication Order Number:

March, 2006 − Rev. 2

NTMSD3P102R2/D

12 3 4 5 6 7...9

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与NTMSD3P102R2_06相关器件

型号	品牌	获取价格	描述	数据表
NTMSD3P102R2G	ONSEMI	获取价格	P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual Dual SO-8 Package
NTMSD3P102R2SG	ONSEMI	获取价格	P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual Dual SO-8 Package
NTMSD3P303	ONSEMI	获取价格	Typical Uses for FETKY Devices
NTMSD3P303R2	ONSEMI	获取价格	P−Channel Enhancement−Mode Power MOSFET and Schottky Diode Dual SO−8 Pac
NTMSD3P303R2/D	ETC	获取价格	FETKY?
NTMSD3P303R2_06	ONSEMI	获取价格	P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual SO-8 Package
NTMSD3P303R2G	ONSEMI	获取价格	P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual SO-8 Package
NTMSD6N303	ONSEMI	获取价格	Typical Uses for FETKY Devices
NTMSD6N303R2	ONSEMI	获取价格	Power MOSFET 6 Amps, 30 Volts N−Channel SO−8 FETKY
NTMSD6N303R2G	ONSEMI	获取价格	Power MOSFET 6 Amps, 30 Volts N−Channel SO−8 FETKY

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