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NTMS4N01R2G

更新时间： 2024-11-18 06:00:47
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 78K
描述
Power MOSFET 4.2 Amps, 20 Volts N−Channel Enhancement−Mode Single SO−8 Package

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中文翻译

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NTMS4N01R2G 技术参数

是否无铅： 不含铅生命周期：Obsolete
零件包装代码：SOT包装说明：LEAD FREE, CASE 751-07, SO-8
针数：8Reach Compliance Code：unknown
ECCN代码：EAR99Factory Lead Time：1 week
风险等级：5.41其他特性：AVALANCHE RATED
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：20 V
最大漏极电流 (Abs) (ID)：5.9 A最大漏极电流 (ID)：3.3 A
最大漏源导通电阻：0.04 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss)：100 pFJESD-30 代码：R-PDSO-G8
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：8
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：0.77 W
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子面层：Tin (Sn)
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：40晶体管应用：SWITCHING
晶体管元件材料：SILICON

NTMS4N01R2G 数据手册

 浏览型号NTMS4N01R2G的Datasheet PDF文件第2页浏览型号NTMS4N01R2G的Datasheet PDF文件第3页浏览型号NTMS4N01R2G的Datasheet PDF文件第4页浏览型号NTMS4N01R2G的Datasheet PDF文件第5页浏览型号NTMS4N01R2G的Datasheet PDF文件第6页 
NTMS4N01R2  
Power MOSFET  
4.2 Amps, 20 Volts  
N−Channel Enhancement−Mode  
Single SO−8 Package  
Features  
http://onsemi.com  
• High Density Power MOSFET with Ultra Low R  
Providing  
DS(on)  
Higher Efficiency  
4.2 AMPERES, 20 VOLTS  
0.045 W @ VGS = 4.5 V  
• Miniature SO−8 Surface Mount Package Saving Board Space;  
Mounting Information for the SO−8 Package is Provided  
• I  
Specified at Elevated Temperature  
DSS  
• Drain−to−Source Avalanche Energy Specified  
• Diode Exhibits High Speed, Soft Recovery  
• Pb−Free Package is Available  
Single N−Channel  
D
Applications  
• Power Management in Portable and Battery−Powered Products, i.e.:  
Computers, Printers, PCMCIA Cards, Cellular & Cordless Telephones  
G
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
S
Rating  
Symbol  
Value  
20  
Unit  
V
Drain−to−Source Voltage  
V
DSS  
DGR  
Drain−to−Gate Voltage (R = 1.0 mW)  
V
20  
V
GS  
SO−8  
Gate−to−Source Voltage − Continuous  
V
10  
V
CASE 751  
GS  
STYLE 13  
1
Thermal Resistance, Junction−to−Ambient  
(Note 1)  
R
P
I
50  
2.5  
5.9  
4.7  
25  
°C/W  
W
A
A
A
q
JA  
Total Power Dissipation @ T = 25°C  
A
D
D
D
Continuous Drain Current @ 25°C  
Continuous Drain Current @ 70°C  
Pulsed Drain Current (Note 4)  
I
MARKING DIAGRAM  
AND PIN ASSIGNMENT  
I
DM  
Thermal Resistance, Junction−to−Ambient  
(Note 2)  
R
P
I
100  
1.25  
4.2  
3.3  
20  
°C/W  
W
A
A
A
q
JA  
Total Power Dissipation @ T = 25°C  
1
2
3
4
8
7
6
5
A
D
D
D
Drain  
Drain  
Drain  
Drain  
N.C.  
Source  
Source  
Gate  
Continuous Drain Current @ 25°C  
Continuous Drain Current @ 70°C  
Pulsed Drain Current (Note 4)  
I
I
DM  
Thermal Resistance, Junction−to−Ambient  
(Note 3)  
R
P
I
162  
0.77  
3.3  
2.6  
15  
°C/W  
W
A
A
A
q
JA  
Total Power Dissipation @ T = 25°C  
Top View  
A
D
D
D
Continuous Drain Current @ 25°C  
Continuous Drain Current @ 70°C  
Pulsed Drain Current (Note 4)  
I
I
DM  
E4N01 = Device Code  
Operating and Storage Temperature Range T , T  
−55 to +150  
169  
°C  
J
stg  
A
Y
= Assembly Location  
= Year  
Single Pulse Drain−to−Source Avalanche  
E
mJ  
AS  
Energy − Starting T = 25°C  
WW  
G
= Work Week  
= Pb−Free Package  
J
(V = 20 Vdc, V = 5.0 Vdc,  
DD  
GS  
Peak I = 7.5 Apk, L = 6 mH, R = 25 W)  
L
G
(Note: Microdot may be in either location)  
Maximum Lead Temperature for Soldering  
Purposes, 1/8″ from case for 10 seconds  
T
260  
°C  
L
ORDERING INFORMATION  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
†
Device  
Package  
Shipping  
NTMS4N01R2  
NTMS4N01R2G  
SO−8  
2500 / Tape & Reel  
2500 / Tape & Reel  
SO−8  
(Pb−Free)  
1. Mounted onto a 2″ square FR−4 Board (1″ sq. 2 oz Cu 0.06″ thick single sided),  
t ≤ 10 seconds.  
2. Mounted onto a 2″ square FR−4 Board (1″ sq. 2 oz Cu 0.06″ thick single sided),  
t = steady state.  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
3. Minimum FR−4 or G−10 PCB, t = Steady State.  
4. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
January, 2006 − Rev. 3  
NTMS4N01R2/D  
 
123456

中文翻译

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NTMS4N01R2G 替代型号

型号 品牌 替代类型 描述 数据表
NDS8425 ONSEMI

类似代替

 单 N 沟道，2.5V 指定，PowerTrench® MOSFET，20V，7.4A，2
NTMS4N01R2 ONSEMI

类似代替

 Power MOSFET 4.2 Amps, 20 Volts N−Channel Enhancement−Mode Single SO−8 P
NDS8425 FAIRCHILD

功能相似

 Single N-Channel Enhancement Mode Field Effect Transistor

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