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NTMS5835NLR2G

更新时间： 2024-11-20 10:30:15
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 105K
描述
Power MOSFET 40 V, 12 A, 10 m These Devices are Pb?Free, Halogen Free/

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NTMS5835NLR2G 数据手册

 浏览型号NTMS5835NLR2G的Datasheet PDF文件第2页浏览型号NTMS5835NLR2G的Datasheet PDF文件第3页浏览型号NTMS5835NLR2G的Datasheet PDF文件第4页浏览型号NTMS5835NLR2G的Datasheet PDF文件第5页浏览型号NTMS5835NLR2G的Datasheet PDF文件第6页 
NTMS5835NL  
Power MOSFET  
40 V, 12 A, 10 mW  
Features  
• Low R  
DS(on)  
• Low Capacitance  
http://onsemi.com  
• Optimized Gate Charge  
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
MAXIMUM RATINGS (T = 25°C unless otherwise stated)  
10 mW @ 10 V  
14 mW @ 4.5 V  
J
40 V  
12 A  
Parameter  
Drain−to−Source Voltage  
Gate−to−Source Voltage  
Symbol  
Value  
40  
Unit  
V
V
DSS  
D
V
GS  
20  
V
Continuous Drain  
Current R  
T = 25°C  
I
9.2  
7.4  
1.5  
1.0  
12  
A
A
D
q
JA  
T = 70°C  
A
(Note 1)  
Steady  
State  
Power Dissipation  
T = 25°C  
A
P
W
A
D
D
G
R
(Note 1)  
q
JA  
T = 70°C  
A
S
Continuous Drain  
Current R  
T = 25°C  
A
I
D
q
JA  
N−CHANNEL MOSFET  
T = 70°C  
A
9.6  
2.6  
1.6  
48  
(Note 1)  
t ≤10 s  
Power Dissipation  
T = 25°C  
A
P
W
R
(Note 1)  
q
JA  
MARKING DIAGRAM/  
PIN ASSIGNMENT  
T = 70°C  
A
8
Pulsed Drain  
Current  
t = 10 ms  
I
A
p
DM  
1
8
Source  
Source  
Source  
Gate  
Drain  
Drain  
Drain  
Drain  
1
Operating Junction and Storage  
Temperature  
T , T  
−55 to  
+150  
°C  
J
STG  
SO−8  
CASE 751  
STYLE 12  
Source Current (Body Diode)  
I
20  
69  
A
mJ  
A
S
Top View  
Single Pulse Drain−to−Source Avalanche  
EAS  
IAS  
Energy (V = 40 V, V = 10 V,  
A
Y
= Assembly Location  
= Year  
DD  
GS  
37  
L = 0.1 mH)  
WW  
G
= Work Week  
= Pb−Free Package  
Lead Temperature for Soldering Purposes  
T
260  
°C  
L
(1/8″ from case for 10 s)  
(Note: Microdot may be in either location)  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
ORDERING INFORMATION  
THERMAL RESISTANCE MAXIMUM RATINGS  
†
Device  
Package  
Shipping  
2500/Tape & Reel  
Parameter  
Symbol  
Value  
82  
Unit  
NTMS5835NLR2G  
SO−8  
(Pb−Free)  
Junction−to−Ambient Steady State (Note 1)  
Junction−to−Ambient − t ≤10 s (Note 1)  
Junction−to−Foot (Drain) (Note 1)  
R
q
JA  
q
JA  
q
JF  
q
JA  
R
R
R
49  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
°C/W  
21  
Junction−to−Ambient Steady State (Note 2)  
121  
1. Surface−mounted on FR4 board using 1 sq−in pad  
(Cu area = 1.127 in sq [2 oz] including traces).  
2
2. Surface−mounted on FR4 board using 0.155 in sq (100mm ) pad size.  
© Semiconductor Components Industries, LLC, 2011  
1
Publication Order Number:  
April, 2011 − Rev. 1  
NTMS5835NL/D  
 
123456

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