5秒后页面跳转
NTMS5838NL PDF预览

NTMS5838NL

更新时间: 2024-01-08 06:40:23
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 105K
描述
Power MOSFET 40 V, 7.5 A, 25 m These Devices are Pb?Free, Halogen Free/BFR

NTMS5838NL 数据手册

 浏览型号NTMS5838NL的Datasheet PDF文件第2页浏览型号NTMS5838NL的Datasheet PDF文件第3页浏览型号NTMS5838NL的Datasheet PDF文件第4页浏览型号NTMS5838NL的Datasheet PDF文件第5页浏览型号NTMS5838NL的Datasheet PDF文件第6页 
NTMS5838NL  
Power MOSFET  
40 V, 7.5 A, 25 mW  
Features  
Low R  
DS(on)  
Low Capacitance  
http://onsemi.com  
Optimized Gate Charge  
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
Compliant  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
MAXIMUM RATINGS (T = 25°C unless otherwise stated)  
25 mW @ 10 V  
J
40 V  
7.5 A  
Parameter  
DraintoSource Voltage  
GatetoSource Voltage  
Symbol  
Value  
40  
Unit  
V
30.8 mW @ 4.5 V  
V
DSS  
D
V
GS  
20  
V
Continuous Drain  
Current R  
T = 25°C  
I
5.8  
4.6  
1.5  
1.0  
7.5  
6.0  
2.6  
1.6  
30  
A
A
D
q
JA  
T = 70°C  
A
(Note 1)  
Steady  
State  
Power Dissipation  
T = 25°C  
A
P
W
A
D
D
G
R
(Note 1)  
q
JA  
T = 70°C  
A
S
Continuous Drain  
Current R  
T = 25°C  
A
I
D
q
JA  
NCHANNEL MOSFET  
T = 70°C  
A
(Note 1)  
t 10 s  
Power Dissipation  
T = 25°C  
A
P
W
R
(Note 1)  
q
JA  
MARKING DIAGRAM/  
PIN ASSIGNMENT  
T = 70°C  
A
Pulsed Drain  
Current  
t = 10 ms  
I
A
p
DM  
1
8
Source  
Source  
Source  
Gate  
Drain  
Drain  
Drain  
Drain  
Operating Junction and Storage  
Temperature  
T , T  
55 to  
°C  
J
STG  
SO8  
CASE 751  
STYLE 12  
+150  
Source Current (Body Diode)  
I
S
7.5  
20  
A
mJ  
A
Top View  
Single Pulse DraintoSource Avalanche  
EAS  
IAS  
Energy (V = 40 V, V = 10 V,  
A
Y
= Assembly Location  
= Year  
DD  
GS  
20  
L = 0.1 mH)  
WW  
G
= Work Week  
= PbFree Package*  
Lead Temperature for Soldering Purposes  
T
260  
°C  
L
(1/8from case for 10 s)  
(*Note: Microdot may be in either location)  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
ORDERING INFORMATION  
THERMAL RESISTANCE MAXIMUM RATINGS  
Device  
Package  
Shipping  
2500/Tape & Reel  
Parameter  
Symbol  
Value  
83  
Unit  
NTMS5838NLR2G  
SO8  
(PbFree)  
JunctiontoAmbient Steady State (Note 1)  
JunctiontoAmbient t 10 s (Note 1)  
JunctiontoFoot (Drain) (Note 1)  
R
q
JA  
q
JA  
q
JF  
q
JA  
R
R
R
49  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
°C/W  
22  
JunctiontoAmbient Steady State (Note 2)  
123  
1. Surfacemounted on FR4 board using 1 sqin pad  
(Cu area = 1.127 in sq [2 oz] including traces).  
2
2. Surfacemounted on FR4 board using 0.155 in sq (100mm ) pad size.  
© Semiconductor Components Industries, LLC, 2011  
1
Publication Order Number:  
April, 2011 Rev. 1  
NTMS5838NL/D  
 

与NTMS5838NL相关器件

型号 品牌 获取价格 描述 数据表
NTMS5838NLR2G ONSEMI

获取价格

Power MOSFET 40 V, 7.5 A, 25 m These Devices are Pb?Free, Halogen Free/BFR
NTMS5P02R2 ONSEMI

获取价格

Power MOSFET -5.4 Amps, -20 Volts
NTMS5P02R2/D ETC

获取价格

Power MOSFET -5.4 Amps, -20 Volts
NTMS5P02R2_06 ONSEMI

获取价格

Power MOSFET -5.4 Amps, -20 Volts
NTMS5P02R2G ONSEMI

获取价格

Power MOSFET -5.4 Amps, -20 Volts
NTMS7N03R2 ONSEMI

获取价格

Power MOSFET 7 Amps, 30 Volts
NTMS7N03R2_05 ONSEMI

获取价格

Power MOSFET 7 Amps, 30 Volts
NTMS7N03R2G ONSEMI

获取价格

Power MOSFET 7 Amps, 30 Volts
NTMSD2P102LR2 ONSEMI

获取价格

NTMSD2P102LR2
NTMSD2P102LR2/D ETC

获取价格

FETKY?