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NDS8425 PDF预览

NDS8425

更新时间: 2024-01-16 23:34:43
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管场效应晶体管
页数 文件大小 规格书
10页 265K
描述
Single N-Channel Enhancement Mode Field Effect Transistor

NDS8425 数据手册

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July 1996  
NDS8425  
Single N-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
7.4 A, 20 V. RDS(ON) = 0.025 W @ VGS= 4.5 V.  
These N-Channel enhancement mode power field effect  
transistors are produced using Fairchild's proprietary, high cell  
density, DMOS technology. This very high density process is  
especially tailored to minimize on-state resistance and provide  
superior switching performance. These devices are particularly  
suited for low voltage applications such as notebook computer  
power management and other battery powered circuits where  
fast switching, low in-line power loss, and resistance to  
transients are needed.  
RDS(ON) = 0.03W @ VGS= 2.7V.  
High density cell design for extremely low RDS(ON)  
.
High power and current handling capability in a widely used  
surface mount package.  
___________________________________________________________________________________________  
5
6
7
8
4
3
2
1
ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise noted  
Symbol Parameter  
NDS8425  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
20  
8
V
V
A
VDSS  
VGSS  
ID  
Drain Current - Continuous  
- Pulsed  
(Note 1a)  
± 7.4  
± 20  
2.5  
PD  
Maximum Power Dissipation  
(Note 1a)  
(Note 1b)  
W
1.2  
1
(Note 1c)  
Operating and Storage Temperature Range  
-55 to 150  
°C  
TJ,TSTG  
THERMAL CHARACTERISTICS  
Thermal Resistance, Junction-to-Ambient  
(Note 1a)  
(Note 1)  
50  
25  
°C/W  
°C/W  
R
JA  
q
Thermal Resistance, Junction-to-Case  
R
JC  
q
© 1997 Fairchild Semiconductor Corporation  
NDS8425 Rev. C  

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