5秒后页面跳转
NDS8426A PDF预览

NDS8426A

更新时间: 2024-09-29 22:45:23
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体小信号场效应晶体管开关光电二极管
页数 文件大小 规格书
7页 198K
描述
Single N-Channel Enhancement Mode Field Effect Transistor

NDS8426A 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SOT包装说明:SOIC-8
针数:8Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.29
Is Samacsys:N配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:20 V最大漏极电流 (Abs) (ID):11 A
最大漏极电流 (ID):10.5 A最大漏源导通电阻:0.0135 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G8
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:8
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

NDS8426A 数据手册

 浏览型号NDS8426A的Datasheet PDF文件第2页浏览型号NDS8426A的Datasheet PDF文件第3页浏览型号NDS8426A的Datasheet PDF文件第4页浏览型号NDS8426A的Datasheet PDF文件第5页浏览型号NDS8426A的Datasheet PDF文件第6页浏览型号NDS8426A的Datasheet PDF文件第7页 
January 1998  
NDS8426A  
Single N-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
10.5 A, 20 V. RDS(ON) = 0.0135 W @ VGS= 4.5 V.  
SO-8 N-Channel enhancement mode power field effect  
transistors are produced using Fairchild's proprietary, high  
cell density, DMOS technology. This very high density  
process is especially tailored to minimize on-state  
resistance and provide superior switching performance.  
These devices are particularly suited for low voltage  
applications such as notebook computer power  
management and other battery powered circuits where  
fast switching, low in-line power loss, and resistance to  
transients are needed.  
RDS(ON) = 0.016 W @ VGS= 2.7 V.  
High density cell design for extremely low RDS(ON)  
.
High power and current handling capability in a widely used  
surface mount package.  
___________________________________________________________________________________________  
5
6
4
3
2
1
7
8
ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise noted  
Symbol Parameter  
NDS8426A  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
20  
±8  
V
V
A
VDSS  
VGSS  
ID  
Drain Current - Continuous  
(Note 1a)  
10.5  
- Pulsed  
30  
Maximum Power Dissipation  
(Note 1a)  
(Note 1b)  
2.5  
W
PD  
1.2  
1
(Note 1c)  
Operating and Storage Temperature Range  
-55 to 150  
°C  
TJ,TSTG  
THERMAL CHARACTERISTICS  
RqJA  
RqJC  
Thermal Resistance, Junction-to-Ambient  
Thermal Resistance, Junction-to-Case  
(Note 1a)  
(Note 1)  
50  
25  
°C/W  
°C/W  
© 1998 Fairchild Semiconductor Corporation  
NDS8426A Rev.B1  

NDS8426A 替代型号

型号 品牌 替代类型 描述 数据表
FDS6670A ONSEMI

功能相似

单 N 沟道逻辑电平 PowerTrench® MOSFET 30V,13A,8mΩ
FDS6680A ONSEMI

功能相似

单 N 沟道,逻辑电平,PowerTrench® MOSFET,30V,12.5A,9.5

与NDS8426A相关器件

型号 品牌 获取价格 描述 数据表
NDS8426A_NL FAIRCHILD

获取价格

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
NDS8426AD84Z FAIRCHILD

获取价格

Small Signal Field-Effect Transistor, 10.5A I(D), 20V, 1-Element, N-Channel, Silicon, Meta
NDS8426AL86Z FAIRCHILD

获取价格

Small Signal Field-Effect Transistor, 10.5A I(D), 20V, 1-Element, N-Channel, Silicon, Meta
NDS8426AL99Z FAIRCHILD

获取价格

Small Signal Field-Effect Transistor, 10.5A I(D), 20V, 1-Element, N-Channel, Silicon, Meta
NDS8426AS62Z FAIRCHILD

获取价格

Small Signal Field-Effect Transistor, 10.5A I(D), 20V, 1-Element, N-Channel, Silicon, Meta
NDS8426D84Z FAIRCHILD

获取价格

Small Signal Field-Effect Transistor, 9.9A I(D), 20V, 1-Element, N-Channel, Silicon, Metal
NDS8426L99Z FAIRCHILD

获取价格

Small Signal Field-Effect Transistor, 9.9A I(D), 20V, 1-Element, N-Channel, Silicon, Metal
NDS8433 FAIRCHILD

获取价格

Single P-Channel Enhancement Mode Field Effect Transistor
NDS8433/L86Z TI

获取价格

5200mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
NDS8433/L99Z TI

获取价格

5200mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET