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FDS6670A

更新时间： 2024-11-12 11:15:43
品牌 Logo 应用领域
安森美 - ONSEMI PC开关光电二极管晶体管
页数 文件大小 规格书
7页 253K
描述
单 N 沟道逻辑电平 PowerTrench® MOSFET 30V，13A，8mΩ

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中文翻译

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FDS6670A 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：SMALL OUTLINE, R-PDSO-G8Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
风险等级：0.96Samacsys Confidence：3
Samacsys Status：ReleasedSamacsys PartID：4487
Samacsys Pin Count：8Samacsys Part Category：Integrated Circuit
Samacsys Package Category：Small Outline PackagesSamacsys Footprint Name：so8-1
Samacsys Released Date：2015-04-16 09:48:08Is Samacsys：N
其他特性：LOGIC LEVEL COMPATIBLE配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：30 V最大漏极电流 (Abs) (ID)：13 A
最大漏极电流 (ID)：13 A最大漏源导通电阻：0.008 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PDSO-G8
JESD-609代码：e4湿度敏感等级：1
元件数量：1端子数量：8
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL功耗环境最大值：1 W
最大功率耗散 (Abs)：2.5 W认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子面层：Nickel/Palladium/Gold (Ni/Pd/Au)端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

FDS6670A 数据手册

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中文翻译

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FDS6670A 替代型号

型号 品牌 替代类型 描述 数据表
FDS6680A ONSEMI

类似代替

 单 N 沟道，逻辑电平，PowerTrench® MOSFET，30V，12.5A，9.5
FDS6680A FAIRCHILD

功能相似

 Single N-Channel, Logic Level, PowerTrench MOSFET
FDS6670A FAIRCHILD

功能相似

 Single N-Channel, Logic Level, PowerTrenchTM MOSFET

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 		6A, 24V, 600kHz Step-Down Converter with Synchronous Gate Driver
FDS6670AS ONSEMI

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 		N 沟道，PowerTrench® SyncFET™，30V，13.5A，9.0mΩ
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FDS6670AS_NL FAIRCHILD

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