Datasheet > FDS6672A_01

FDS6672A_01

更新时间： 2024-11-12 04:18:39

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
5页	88K
描述
30V N-Channel PowerTrench MOSFET

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FDS6672A_01 数据手册

April 2001

FDS6672A

30V N-Channel PowerTrench MOSFET

General Description

Features

This N-Channel MOSFET has been designed

specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional

switching PWM controllers. It has been optimized for

low gate charge, low R_DS(ON)and fast switching speed.

• 12.5 A, 30 V. R_DS(ON)= 8 mΩ @ V_GS= 10 V

R_DS(ON)= 9.5 mΩ @ V_GS= 4.5 V

• High performance trench technology for extremely

low R_DS(ON)

Applications

• Low gate charge (33 nC typical)

• DC/DC converter

• High power and current handling capability

SO-8

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

Units

V_GSS

Gate-Source Voltage

±12

12.5

I_D

Drain Current – Continuous

– Pulsed

(Note 1a)

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

(Note 1c)

2.5

P_D

1.2

1.0

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

R_θJA

°C/W

R_θJC

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

FDS6672A

13’’

12mm

2500 units

FDS6672A Rev C(W)

2000 Fairchild Semiconductor Corporation

12 3 4 5

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