Datasheet > FDS6675

FDS6675

更新时间： 2024-09-25 17:15:19

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
6页	353K
描述
种类:P-Channel;漏源电压（Vdss）:-30V;持续漏极电流（Id）（在25°C时）:-11A;Vgs(th)(V):±20;漏源导通电阻:14mΩ@-10V

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

FDS6675 数据手册

FDS6675

UMW

-30V P-Channel MOSFET

General Description

These devices are well suited for notebook computer

applications: load switching and power management,

battery charging circuits, and DC/DC conversion.

Features

VDS (V) =-30V

•

SOP-8

ID= -11 A

(V = -10V)

•

RDS(ON) ＜ 14m

Ω(V

=10V)

RDS(ON) ＜ 20 m

Ω(V

=4.5V)

Absolute Maximum Ratings

T_A= 25^oC unless otherwise noted

Symbol Parameter

FDS6675

-30

Units

V_DSS

V_GSS

I_D

Drain-Source Voltage

Gate-Source Voltage

±20

Drain Current - Continuous

- Pulsed

(Note 1a)

-11

-50

Power Dissipation for Single Operation

2.5

P_D

(Note 1b)

(Note 1c)

1.2

T_J,T_STG

Operating and Storage Temperature Range

-55 to 150

°C

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Ambient (Note 1a)

°C/W

R_q_JA

R_q_JC

Thermal Resistance, Junction-to-Case

(Note 1)

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6

中文翻译

下载PDF

与FDS6675相关器件

型号	品牌	获取价格	描述	数据表
FDS6675_07	FAIRCHILD	获取价格	Single P-Channel, Logic Level, PowerTrenchTM MOSFET
FDS6675_NL	FAIRCHILD	获取价格	暂无描述
FDS6675A	FAIRCHILD	获取价格	30V P-Channel PowerTrench MOSFET
FDS6675A_NL	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 11A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-
FDS6675BZ	FAIRCHILD	获取价格	P-Channel PowerTrench㈢ MOSFET
FDS6675BZ	ONSEMI	获取价格	P 沟道，PowerTrench® MOSFET，-30V，-11A，13mΩ
FDS6675BZ_08	FAIRCHILD	获取价格	P-Channel PowerTrench㈢ MOSFET
FDS6675D84Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 11A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-
FDS6675F011	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 11A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-
FDS6675S62Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 11A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-