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FDS6680A PDF预览

FDS6680A

更新时间： 2024-11-12 11:12:59
品牌 Logo 应用领域
安森美 - ONSEMI 开关光电二极管晶体管
页数 文件大小 规格书
6页 311K
描述
单 N 沟道，逻辑电平，PowerTrench® MOSFET，30V，12.5A，9.5mΩ

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中文翻译

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FDS6680A 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：SMALL OUTLINE, R-PDSO-G8Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
Factory Lead Time：1 week风险等级：0.97
其他特性：LOGIC LEVEL COMPATIBLE配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：30 V最大漏极电流 (Abs) (ID)：12.5 A
最大漏极电流 (ID)：12.5 A最大漏源导通电阻：0.0095 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PDSO-G8
JESD-609代码：e4湿度敏感等级：1
元件数量：1端子数量：8
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
最低工作温度：-55 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
功耗环境最大值：1 W最大功率耗散 (Abs)：2.5 W
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子面层：Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

FDS6680A 数据手册

 浏览型号FDS6680A的Datasheet PDF文件第2页浏览型号FDS6680A的Datasheet PDF文件第3页浏览型号FDS6680A的Datasheet PDF文件第4页浏览型号FDS6680A的Datasheet PDF文件第5页浏览型号FDS6680A的Datasheet PDF文件第6页 
ON Semiconductor  
Is Now  
To learn more about onsemi™, please visit our website at  
www.onsemi.com  
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or  
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi  
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without  
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,  
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all  
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,  
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/  
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application  
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized  
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for  
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,  
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative  
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.  
123456

中文翻译

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FDS6680A 替代型号

型号 品牌 替代类型 描述 数据表
FDS6670A ONSEMI

类似代替

 单 N 沟道逻辑电平 PowerTrench® MOSFET 30V，13A，8mΩ
FDS6680A FAIRCHILD

功能相似

 Single N-Channel, Logic Level, PowerTrench MOSFET
FDS6670A FAIRCHILD

功能相似

 Single N-Channel, Logic Level, PowerTrenchTM MOSFET

与FDS6680A相关器件

型号 品牌 获取价格 描述 数据表
FDS6680A_12 FAIRCHILD

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 		Single N-Channel, Logic Level, PowerTrench®
FDS6680A_NL FAIRCHILD

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 		暂无描述
FDS6680AF011 FAIRCHILD

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 		Small Signal Field-Effect Transistor, 12.5A I(D), 30V, 1-Element, N-Channel, Silicon, Meta
FDS6680A-NBBI005A ONSEMI

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 		单 N 沟道，逻辑电平，PowerTrench® MOSFET，30V，12.5A，9.5
FDS6680AS FAIRCHILD

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 		30V N-Channel PowerTrench SyncFET
FDS6680AS ONSEMI

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 		N 沟道 PowerTrench® SyncFET™，30V，11.5A，10.0mΩ
FDS6680AS_08 FAIRCHILD

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 		30V N-Channel PowerTrench SyncFET
FDS6680AS_NL FAIRCHILD

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 		30V N-Channel PowerTrench SyncFET
FDS6680D84Z FAIRCHILD

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 		Small Signal Field-Effect Transistor, 11.5A I(D), 30V, 1-Element, N-Channel, Silicon, Meta
FDS6680L86Z FAIRCHILD

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 		Small Signal Field-Effect Transistor, 11.5A I(D), 30V, 1-Element, N-Channel, Silicon, Meta

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