Datasheet > FDS6685

FDS6685

更新时间： 2024-09-24 17:15:47

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友台半导体 - UMW		/
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描述
种类:P-Channel;漏源电压（Vdss）:-30V;持续漏极电流（Id）（在25°C时）:-8.8A;Vgs(th)(V):±25;漏源导通电阻:20mΩ@-10V

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FDS6685 数据手册

FDS6685

-30V P-Channel MOSFET

UMW

General Description

This P -Channel MOSFET is a rugged gate version of ad-

vanced PowerTrench process.

It has been optimized for power management applications

requiring a wide range of gave drive voltage ratings (4.5V

– 25V).

Features

•

VDS (V) = - 30V

•

ID = -8.8 A

RDS(ON) ＜

(V_GS= 10V)

20m

Ω(V

=-10V)

35 m

Ω(V

•

=-4.5V)

Low gate charge (17nC typical)

Fast switching speed

High performancetrench technology for extremely

low R_DS(ON)

•

High power and current handling capability

Applications

•

Power management

Load switch

Battery protection

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

Parameter

Ratings

Units

V_DSS

Drain-Source Voltage

–30

V_GSS

I_D

Gate-Source Voltage

±25

Drain Current – Continuous

– Pulsed

(Note 1a)

–8.8

–50

P_D

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

(Note 1c)

2.5

1.2

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +175

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

(Note 1a)

(Note 1c)

(Note 1)

125

R_qJA

R_qJC

°C/W

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6

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