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FDS6688_04 PDF预览

FDS6688_04

更新时间: 2024-09-23 04:18:39
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飞兆/仙童 - FAIRCHILD /
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5页 116K
描述
30V N-Channel PowerTrench MOSFET

FDS6688_04 数据手册

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January 2004  
FDS6688  
30V N-Channel PowerTrenchÒ MOSFET  
General Description  
Features  
This N-Channel MOSFET has been designed  
specifically to improve the overall efficiency of DC/DC  
converters using either synchronous or conventional  
switching PWM controllers. It has been optimized for  
“low side” synchronous rectifier operation, providing an  
extremely low RDS(ON) in a small package.  
·
16 A, 30 V.  
RDS(ON) = 6 mW @ VGS = 10 V  
RDS(ON) = 7 mW @ VGS = 4.5 V  
·
·
Ultra-low gate charge (40 nC typical)  
High performance trench technology for extremely  
low RDS(ON)  
Applications  
·
DC/DC converter  
·
High power and current handling capability  
D
5
6
7
8
4
3
2
1
D
D
D
G
SO-8  
S
S
S
Pin 1  
Absolute Maximum Ratings TA=25oC unless otherwise noted  
Symbol  
VDSS  
Parameter  
Drain-Source Voltage  
Ratings  
Units  
30  
V
V
A
VGSS  
Gate-Source Voltage  
±20  
ID  
Drain Current – Continuous  
– Pulsed  
(Note 1a)  
16  
50  
2.5  
Power Dissipation for Single Operation  
(Note 1a)  
(Note 1b)  
(Note 1c)  
PD  
W
1.4  
1.2  
TJ, TSTG  
Operating and Storage Junction Temperature Range  
–55 to +175  
°C  
Thermal Characteristics  
Thermal Resistance, Junction-to-Ambient  
(Note 1a)  
(Note 1c)  
(Note 1)  
50  
125  
25  
RqJA  
RqJA  
RqJC  
°C/W  
°C/W  
°C/W  
Thermal Resistance, Junction-to-Ambient  
Thermal Resistance, Junction-to-Case  
Package Marking and Ordering Information  
Device Marking  
Device  
Reel Size  
Tape width  
Quantity  
FDS6688  
FDS6688  
13’’  
12mm  
2500 units  
FDS6688 Rev D(W)  
Ó2004 Fairchild Semiconductor Corporation  

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