Datasheet > FDS6682

FDS6682

更新时间： 2024-09-24 17:15:43

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
6页	431K
描述
种类:N-Channel;漏源电压（Vdss）:30V;持续漏极电流（Id）（在25°C时）:14A;Vgs(th)(V):±20;漏源导通电阻:7.5mΩ@10V;漏源导通电阻:9mΩ@4.5V

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FDS6682 数据手册

FDS6682

UMW

30V N-Channel MOSFET

General Description

This N-Channel MOSFET has been designed specifically

to improve the overall efficiency of DC/DC converters

using either synchronous or conventional switching

PWM controllers. It has been optimized for “low side”

synchronous rectifier operation, providing an extremely

low R_DS(ON)in a small package.

Features

•

VDS (V) =30V

ID= 14 A

SOP-8

•

(V = 10V)

RDS(ON) ＜ 7.5m

Ω(V

=10V)

RDS(ON) ＜

9 m

Ω(V

•

=4.5V)

· Low gate charge (22 nC typical)

· High performance trench technology for

extremely low R_DS(ON)

· High power and current handling capability

T =25^oC unless otherwise noted

Absolute Maximum Ratings

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

Units

V_GSS

Gate-Source Voltage

±20

I_D

Drain Current – Continuous

– Pulsed

(Note 1a)

2.5

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

(Note 1c)

P_D

1.2

1.0

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

R_qJA

°C/W

R_qJC

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6

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