Datasheet > FDS6680AS_08

FDS6680AS_08

更新时间： 2024-11-11 04:18:39

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
8页	807K
描述
30V N-Channel PowerTrench SyncFET

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FDS6680AS_08 数据手册

May 2008

FDS6680AS

30V N-Channel PowerTrench^®SyncFET^™

General Description

Features

The FDS6680AS is designed to replace a single SO-8

MOSFET and Schottky diode in synchronous DC:DC

power supplies. This 30V MOSFET is designed to

maximize power conversion efficiency, providing a low

•

11.5 A, 30 V. R_DS(ON)max= 10.0 mΩ @ V_GS= 10 V

R_DS(ON)max= 12.5 mΩ @ V_GS= 4.5 V

•

Includes SyncFET Schottky body diode

Low gate charge (22nC typical)

R_DS(ON)

and low gate charge.

The FDS6680AS

includes an integrated Schottky diode using Fairchild’s

monolithic SyncFET technology. The performance of

the FDS6680AS as the low-side switch in

synchronous rectifier is indistinguishable from the

performance of the FDS6680 in parallel with a Schottky

diode.

High performance trench technology for extremely low

R_DS(ON)and fast switching

•

High power and current handling capability

Applications

• DC/DC converter

• Low side notebooks

SO-8

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

Units

V_GSS

I_D

Gate-Source Voltage

±20

Drain Current – Continuous

– Pulsed

(Note 1a)

11.5

P_D

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

2.5

1.2

(Note 1c)

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

R_θJA

°C/W

R_θJC

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

FDS6680AS

13’’

12mm

2500 units

FDS6680AS Rev B2(X)

12 3 4 5 6 7 8

中文翻译

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