生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G8 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.76 | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 20 V | 最大漏极电流 (ID): | 7.4 A |
最大漏源导通电阻: | 0.025 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-G8 | 元件数量: | 1 |
端子数量: | 8 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 功耗环境最大值: | 1 W |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NDS8425/L86Z | TI |
获取价格 |
7400mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | |
NDS8425/L99Z | TI |
获取价格 |
7400mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | |
NDS8425_NL | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 7.4A I(D), 20V, 1-Element, N-Channel, Silicon, Metal | |
NDS8425D84Z | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 7.4A I(D), 20V, 1-Element, N-Channel, Silicon, Metal | |
NDS8425F011 | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 7.4A I(D), 20V, 1-Element, N-Channel, Silicon, Metal | |
NDS8425L99Z | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 7.4A I(D), 20V, 1-Element, N-Channel, Silicon, Metal | |
NDS8426 | FAIRCHILD |
获取价格 |
Single N-Channel Enhancement Mode Field Effect Transistor | |
NDS8426/L86Z | TI |
获取价格 |
9900mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | |
NDS8426A | FAIRCHILD |
获取价格 |
Single N-Channel Enhancement Mode Field Effect Transistor | |
NDS8426A_NL | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |