Datasheet > NTMS4P01R2

NTMS4P01R2

更新时间： 2024-11-19 23:55:07

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
8页	87K
描述
TRANSISTOR \| MOSFET \| P-CHANNEL \| 12V V(BR)DSS \| 2.32A I(D) \| SO

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NTMS4P01R2 数据手册

NTMS4P01R2

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Power MOSFET

-4.5 Amps, -12 Volts

P–Channel Enhancement–Mode

Single SO–8 Package

Features

http://onsemi.com

• High Density Power MOSFET with Ultra Low R

DS(on)

–4.5 AMPERES

–12 VOLTS

0.045 W @ V_GS= –4.5 V

Providing Higher Efficiency

• Miniature SO–8 Surface Mount Package – Saves Board Space

• Diode Exhibits High Speed with Soft Recovery

• I

Specified at Elevated Temperature

• Drain–to–Source Avalanche Energy Specified

DSS

Single P–Channel

• Mounting Information for the SO–8 Package is Provided

Applications

• Power Management in Portable and Battery–Powered Products, i.e.:

Computers, Printers, PCMCIA Cards, Cellular & Cordless Telephones

MAXIMUM RATINGS

Please See the Table on the Following Page

SO–8

CASE 751

STYLE 13

MARKING DIAGRAM

& PIN ASSIGNMENT

Drain

N.C.

Source

Gate

Top View

E4P01 = Device Code

= Assembly Location

= Year

= Work Week

ORDERING INFORMATION

Device

NTMS4P01R2

Package

Shipping

2500/Tape & Reel

SO–8

This document contains information on a product under development. ON Semiconductor

reserves the right to change or discontinue this product without notice.

Semiconductor Components Industries, LLC, 2001

Publication Order Number:

February, 2001 – Rev. 0

NTMS4P01R2/D

12 3 4 5 6 7 8

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