5秒后页面跳转
捷配首页

Datasheet > NTMS4935N
NTMS4935N PDF预览

NTMS4935N

更新时间： 2024-11-20 05:54:23
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
5页 133K
描述
Power MOSFET 30 V, 16 A, N−Channel, SO−8

阅读下载

中文翻译

获取价格

NTMS4935N 数据手册

 浏览型号NTMS4935N的Datasheet PDF文件第2页浏览型号NTMS4935N的Datasheet PDF文件第3页浏览型号NTMS4935N的Datasheet PDF文件第4页浏览型号NTMS4935N的Datasheet PDF文件第5页 
NTMS4935N  
Power MOSFET  
30 V, 16 A, N−Channel, SO−8  
Features  
• Low R  
to Minimize Conduction Losses  
DS(on)  
• Low Capacitance to Minimize Driver Losses  
• Optimized Gate Charge to Minimize Switching Losses  
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
http://onsemi.com  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
Applications  
• DC−DC Converters  
• Points of Loads  
• Power Load Switch  
• Motor Controls  
5.1 mW @ 10 V  
7.0 mW @ 4.5 V  
30 V  
16 A  
N−Channel  
MAXIMUM RATINGS (T = 25°C unless otherwise stated)  
J
D
Parameter  
Drain−to−Source Voltage  
Symbol Value Unit  
V
30  
20  
V
V
A
DSS  
Gate−to−Source Voltage  
V
GS  
Continuous Drain  
Steady  
State  
I
D
T = 25°C  
13  
A
G
Current R  
(Note 1)  
q
JA  
T = 70°C  
A
10.4  
1.38  
Power Dissipation R  
(Note 1)  
Steady  
State  
T = 25°C  
A
P
W
A
q
D
JA  
JA  
S
Continuous Drain  
Steady  
State  
I
D
T = 25°C  
A
10  
8.0  
MARKING DIAGRAM/  
PIN ASSIGNMENT  
Current R  
(Note 2)  
q
JA  
T = 70°C  
A
1
8
Power Dissipation R  
(Note 2)  
T = 25°C  
A
P
I
0.81  
W
A
q
D
Source  
Source  
Source  
Gate  
Drain  
Drain  
Drain  
Drain  
1
SO−8  
CASE 751  
STYLE 12  
Continuous Drain  
Steady  
State  
T = 25°C  
A
16  
12.7  
2.1  
D
Current R , t v 10 s  
q
JA  
T = 70°C  
A
(Note 1)  
Top View  
Power Dissipation  
Steady  
State  
T = 25°C  
A
P
D
W
R
q
, t v 10 s(Note 1)  
4935N = Device Code  
JA  
A
Y
= Assembly Location  
= Year  
= Work Week  
= Pb−Free Package  
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
126  
A
A
p
Operating Junction and Storage Temperature  
T ,  
−55 to  
150  
°C  
J
stg  
WW  
G
T
Source Current (Body Diode)  
I
S
2.1  
A
(Note: Microdot may be in either location)  
Single Pulse Drain−to−Source Avalanche Energy  
E
AS  
128  
mJ  
(T = 25°C, V = 30 V, V = 10 V,  
J
DD  
GS  
ORDERING INFORMATION  
I = 16 A , L = 1.0 mH, R = 25 W)  
L
pk  
G
†
Device  
Package  
Shipping  
2500/Tape & Reel  
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
L
260  
°C  
NTMS4935NR2G  
SO−8  
(Pb−Free)  
THERMAL RESISTANCE MAXIMUM RATINGS  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Parameter  
Symbol Value Unit  
°C/W  
Junction−to−Ambient – Steady State (Note 1)  
Junction−to−Ambient – t v 10 s (Note 1)  
Junction−to−Foot (Drain)  
R
R
91.9  
60.4  
21.6  
154  
q
q
JA  
JA  
R
R
q
JF  
Junction−to−Ambient – Steady State (Note 2)  
q
JA  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Surfacemounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq  
[1 oz] including traces).  
2. Surfacemounted on FR4 board using the minimum recommended pad size.  
© Semiconductor Components Industries, LLC, 2009  
1
Publication Order Number:  
September, 2009 − Rev. 0  
NTMS4935N/D  
 
12345

中文翻译

下载PDF

与NTMS4935N相关器件

型号 品牌 获取价格 描述 数据表
NTMS4935NR2G ONSEMI

获取价格

 		Power MOSFET 30 V, 16 A, N−Channel, SO−8
NTMS4937N ONSEMI

获取价格

 		Power MOSFET Power MOSFET
NTMS4937NR2G ONSEMI

获取价格

 		Power MOSFET Power MOSFET
NTMS4939N ONSEMI

获取价格

 		Power MOSFET 30 V, 12.5 A, N−Channel, SO−8
NTMS4939NR2G ONSEMI

获取价格

 		Power MOSFET 30 V, 12.5 A, N−Channel, SO−8
NTMS4N01R2 ONSEMI

获取价格

 		Power MOSFET 4.2 Amps, 20 Volts N−Channel Enhancement−Mode Single SO−8 P
NTMS4N01R2/D ETC

获取价格

 		Power MOSFET 4.2 Amps， 20 Volts
NTMS4N01R2G ONSEMI

获取价格

 		Power MOSFET 4.2 Amps, 20 Volts N−Channel Enhancement−Mode Single SO−8 P
NTMS4P01R2 ETC

获取价格

 		TRANSISTOR | MOSFET | P-CHANNEL | 12V V(BR)DSS | 2.32A I(D) | SO
NTMS4P01R2/D ETC

获取价格

 		Power MOSFET -4.5 Amps， -12 Volts

与NTMS4935N相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证