5秒后页面跳转
NTMS4920N PDF预览

NTMS4920N

更新时间: 2024-11-06 05:54:23
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
5页 128K
描述
Power MOSFET 30 V, 17 A, N−Channel, SO−8

NTMS4920N 数据手册

 浏览型号NTMS4920N的Datasheet PDF文件第2页浏览型号NTMS4920N的Datasheet PDF文件第3页浏览型号NTMS4920N的Datasheet PDF文件第4页浏览型号NTMS4920N的Datasheet PDF文件第5页 
NTMS4920N  
Power MOSFET  
30 V, 17 A, NChannel, SO8  
Features  
Low R  
to Minimize Conduction Losses  
DS(on)  
Low Capacitance to Minimize Driver Losses  
Optimized Gate Charge to Minimize Switching Losses  
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
Compliant  
http://onsemi.com  
V
R
DS(ON)  
MAX  
I MAX  
D
(BR)DSS  
Applications  
DCDC Converters  
Points of Loads  
Power Load Switch  
Motor Controls  
4.3 mW @ 10 V  
5.7 mW @ 4.5 V  
30 V  
17 A  
NChannel  
MAXIMUM RATINGS (T = 25°C unless otherwise stated)  
J
D
Parameter  
DraintoSource Voltage  
Symbol Value Unit  
V
30  
20  
V
V
A
DSS  
GatetoSource Voltage  
V
GS  
Continuous Drain  
Steady  
State  
I
D
T = 25°C  
14.1  
11.3  
1.46  
A
G
Current R  
(Note 1)  
q
JA  
T = 70°C  
A
Power Dissipation R  
(Note 1)  
Steady  
State  
T = 25°C  
A
P
W
A
q
D
JA  
JA  
S
Continuous Drain  
Steady  
State  
I
D
T = 25°C  
A
10.6  
8.5  
MARKING DIAGRAM/  
PIN ASSIGNMENT  
Current R  
(Note 2)  
q
JA  
T = 70°C  
A
1
8
Power Dissipation R  
(Note 2)  
T = 25°C  
A
P
I
0.82  
W
A
q
D
Source  
Source  
Source  
Gate  
Drain  
Drain  
Drain  
Drain  
1
SO8  
CASE 751  
STYLE 12  
Continuous Drain  
Steady  
State  
T = 25°C  
A
17  
D
Current R , t v 10 s  
q
JA  
T = 70°C  
A
13.6  
2.12  
(Note 1)  
Top View  
Power Dissipation  
Steady  
State  
T = 25°C  
A
P
D
W
R , t v 10 s(Note 1)  
q
JA  
4920N = Device Code  
A
Y
= Assembly Location  
= Year  
= Work Week  
= PbFree Package  
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
136  
A
A
p
Operating Junction and Storage Temperature  
T ,  
55 to  
150  
°C  
J
stg  
WW  
G
T
Source Current (Body Diode)  
I
S
2.1  
A
(Note: Microdot may be in either location)  
Single Pulse DraintoSource Avalanche Energy  
E
AS  
162  
mJ  
(T = 25°C, V = 30 V, V = 10 V,  
J
DD  
GS  
ORDERING INFORMATION  
I = 18 A , L = 1.0 mH, R = 25 W)  
L
pk  
G
Device  
Package  
Shipping  
2500/Tape & Reel  
Lead Temperature for Soldering Purposes  
(1/8from case for 10 s)  
T
260  
°C  
L
NTMS4920NR2G  
SO8  
(PbFree)  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
THERMAL RESISTANCE MAXIMUM RATINGS  
Parameter  
Symbol Value Unit  
°C/W  
JunctiontoAmbient – Steady State (Note 1)  
JunctiontoAmbient – t v 10 s (Note 1)  
JunctiontoFoot (Drain)  
R
85.5  
59  
q
JA  
JA  
R
q
R
R
25  
q
JF  
JunctiontoAmbient – Steady State (Note 2)  
152  
q
JA  
1. Surfacemounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq  
[1 oz] including traces).  
2. Surfacemounted on FR4 board using the minimum recommended pad size.  
©
Semiconductor Components Industries, LLC, 2009  
1
Publication Order Number:  
September, 2009 Rev. 1  
NTMS4920N/D  
 

与NTMS4920N相关器件

型号 品牌 获取价格 描述 数据表
NTMS4920NR2G ONSEMI

获取价格

Power MOSFET 30 V, 17 A, N−Channel, SO−8
NTMS4935N ONSEMI

获取价格

Power MOSFET 30 V, 16 A, N−Channel, SO−8
NTMS4935NR2G ONSEMI

获取价格

Power MOSFET 30 V, 16 A, N−Channel, SO−8
NTMS4937N ONSEMI

获取价格

Power MOSFET Power MOSFET
NTMS4937NR2G ONSEMI

获取价格

Power MOSFET Power MOSFET
NTMS4939N ONSEMI

获取价格

Power MOSFET 30 V, 12.5 A, N−Channel, SO−8
NTMS4939NR2G ONSEMI

获取价格

Power MOSFET 30 V, 12.5 A, N−Channel, SO−8
NTMS4N01R2 ONSEMI

获取价格

Power MOSFET 4.2 Amps, 20 Volts N−Channel Enhancement−Mode Single SO−8 P
NTMS4N01R2/D ETC

获取价格

Power MOSFET 4.2 Amps, 20 Volts
NTMS4N01R2G ONSEMI

获取价格

Power MOSFET 4.2 Amps, 20 Volts N−Channel Enhancement−Mode Single SO−8 P