NTMS4920N
Power MOSFET
30 V, 17 A, N−Channel, SO−8
Features
• Low R
to Minimize Conduction Losses
DS(on)
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
http://onsemi.com
V
R
DS(ON)
MAX
I MAX
D
(BR)DSS
Applications
• DC−DC Converters
• Points of Loads
• Power Load Switch
• Motor Controls
4.3 mW @ 10 V
5.7 mW @ 4.5 V
30 V
17 A
N−Channel
MAXIMUM RATINGS (T = 25°C unless otherwise stated)
J
D
Parameter
Drain−to−Source Voltage
Symbol Value Unit
V
30
20
V
V
A
DSS
Gate−to−Source Voltage
V
GS
Continuous Drain
Steady
State
I
D
T = 25°C
14.1
11.3
1.46
A
G
Current R
(Note 1)
q
JA
T = 70°C
A
Power Dissipation R
(Note 1)
Steady
State
T = 25°C
A
P
W
A
q
D
JA
JA
S
Continuous Drain
Steady
State
I
D
T = 25°C
A
10.6
8.5
MARKING DIAGRAM/
PIN ASSIGNMENT
Current R
(Note 2)
q
JA
T = 70°C
A
1
8
Power Dissipation R
(Note 2)
T = 25°C
A
P
I
0.82
W
A
q
D
Source
Source
Source
Gate
Drain
Drain
Drain
Drain
1
SO−8
CASE 751
STYLE 12
Continuous Drain
Steady
State
T = 25°C
A
17
D
Current R , t v 10 s
q
JA
T = 70°C
A
13.6
2.12
(Note 1)
Top View
Power Dissipation
Steady
State
T = 25°C
A
P
D
W
R , t v 10 s(Note 1)
q
JA
4920N = Device Code
A
Y
= Assembly Location
= Year
= Work Week
= Pb−Free Package
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
136
A
A
p
Operating Junction and Storage Temperature
T ,
−55 to
150
°C
J
stg
WW
G
T
Source Current (Body Diode)
I
S
2.1
A
(Note: Microdot may be in either location)
Single Pulse Drain−to−Source Avalanche Energy
E
AS
162
mJ
(T = 25°C, V = 30 V, V = 10 V,
J
DD
GS
ORDERING INFORMATION
I = 18 A , L = 1.0 mH, R = 25 W)
L
pk
G
†
Device
Package
Shipping
2500/Tape & Reel
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
260
°C
L
NTMS4920NR2G
SO−8
(Pb−Free)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
°C/W
Junction−to−Ambient – Steady State (Note 1)
Junction−to−Ambient – t v 10 s (Note 1)
Junction−to−Foot (Drain)
R
85.5
59
q
JA
JA
R
q
R
R
25
q
JF
Junction−to−Ambient – Steady State (Note 2)
152
q
JA
1. Surfacemounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
2. Surfacemounted on FR4 board using the minimum recommended pad size.
©
Semiconductor Components Industries, LLC, 2009
1
Publication Order Number:
September, 2009 − Rev. 1
NTMS4920N/D