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NTMS4939N

更新时间： 2024-01-28 11:31:51
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
5页 132K
描述
Power MOSFET 30 V, 12.5 A, N−Channel, SO−8

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NTMS4939N 数据手册

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NTMS4939N  
Power MOSFET  
30 V, 12.5 A, N−Channel, SO−8  
Features  
• Low R  
to Minimize Conduction Losses  
DS(on)  
• Low Capacitance to Minimize Driver Losses  
• Optimized Gate Charge to Minimize Switching Losses  
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
http://onsemi.com  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
Applications  
• DC−DC Converters  
• Points of Loads  
• Power Load Switch  
• Motor Controls  
8.4 mW @ 10 V  
11 mW @ 4.5 V  
30 V  
12.5 A  
N−Channel  
MAXIMUM RATINGS (T = 25°C unless otherwise stated)  
J
D
Parameter  
Drain−to−Source Voltage  
Symbol Value Unit  
V
DSS  
30  
20  
V
V
A
Gate−to−Source Voltage  
V
GS  
Continuous Drain  
Steady  
State  
I
D
T = 25°C  
10.3  
8.3  
A
G
Current R  
(Note 1)  
q
JA  
T = 70°C  
A
Power Dissipation R  
(Note 1)  
Steady  
State  
T = 25°C  
P
1.35  
W
A
q
A
D
JA  
JA  
S
Continuous Drain  
Steady  
State  
I
D
T = 25°C  
A
8.0  
6.4  
0.8  
MARKING DIAGRAM/  
PIN ASSIGNMENT  
Current R  
(Note 2)  
q
JA  
T = 70°C  
A
1
8
Power Dissipation R  
(Note 2)  
T = 25°C  
A
P
I
W
A
q
D
Source  
Source  
Source  
Gate  
Drain  
Drain  
Drain  
Drain  
1
SO−8  
CASE 751  
STYLE 12  
Continuous Drain  
Steady  
State  
T = 25°C  
A
12.5  
10  
D
Current R , t v 10 s  
q
JA  
T = 70°C  
A
(Note 1)  
Top View  
Power Dissipation  
Steady  
State  
T = 25°C  
A
P
D
2.0  
W
R
q
, t v 10 s(Note 1)  
4939N = Device Code  
JA  
A
Y
= Assembly Location  
= Year  
= Work Week  
= Pb−Free Package  
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
100  
A
A
p
Operating Junction and Storage Temperature  
T ,  
−55 to  
150  
°C  
J
stg  
WW  
G
T
Source Current (Body Diode)  
I
S
2.0  
A
(Note: Microdot may be in either location)  
Single Pulse Drain−to−Source Avalanche Energy  
E
AS  
60.5  
mJ  
(T = 25°C, V = 30 V, V = 10 V,  
J
DD  
GS  
ORDERING INFORMATION  
I = 11 A , L = 1.0 mH, R = 25 W)  
L
pk  
G
†
Device  
Package  
Shipping  
2500/Tape & Reel  
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
L
260  
°C  
NTMS4939NR2G  
SO−8  
(Pb−Free)  
THERMAL RESISTANCE MAXIMUM RATINGS  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Parameter  
Symbol Value Unit  
°C/W  
Junction−to−Ambient – Steady State (Note 1)  
Junction−to−Ambient – t v 10 s (Note 1)  
Junction−to−Foot (Drain)  
R
R
92.7  
61.7  
q
q
JA  
JA  
R
R
23.5  
q
JF  
Junction−to−Ambient – Steady State (Note 2)  
155.6  
q
JA  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Surfacemounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq  
[1 oz] including traces).  
2. Surfacemounted on FR4 board using the minimum recommended pad size.  
© Semiconductor Components Industries, LLC, 2009  
1
Publication Order Number:  
September, 2009 − Rev. 0  
NTMS4939N/D  
 
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