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NTMS4917NR2G PDF预览

NTMS4917NR2G

更新时间： 2024-11-06 10:30:15
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
5页 104K
描述
Power MOSFET 30 V, 10.5 A, N?Channel, SO?8 Low RDS(on) to Minimize Conduction Losses

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中文翻译

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NTMS4917NR2G 技术参数

是否无铅： 不含铅生命周期：Obsolete
零件包装代码：SOT包装说明：SMALL OUTLINE, R-PDSO-G8
针数：8Reach Compliance Code：unknown
ECCN代码：EAR99Factory Lead Time：1 week
风险等级：5.8配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：30 V最大漏极电流 (ID)：7.1 A
最大漏源导通电阻：0.011 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-PDSO-G8JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：8工作模式：ENHANCEMENT MODE
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL表面贴装：YES
端子面层：Tin (Sn)端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

NTMS4917NR2G 数据手册

 浏览型号NTMS4917NR2G的Datasheet PDF文件第2页浏览型号NTMS4917NR2G的Datasheet PDF文件第3页浏览型号NTMS4917NR2G的Datasheet PDF文件第4页浏览型号NTMS4917NR2G的Datasheet PDF文件第5页 
NTMS4917N  
Power MOSFET  
30 V, 10.5 A, N−Channel, SO−8  
Features  
• Low R  
to Minimize Conduction Losses  
DS(on)  
• Low Capacitance to Minimize Driver Losses  
• Optimized Gate Charge to Minimize Switching Losses  
• Optimized for 5 V, 12 V Gate Drives  
http://onsemi.com  
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
11 mW @ 10 V  
15 mW @ 4.5 V  
Applications  
30 V  
10.5 A  
• DC−DC Converters  
• Printers  
MAXIMUM RATINGS (T = 25°C unless otherwise stated)  
N−Channel  
J
Parameter  
Drain−to−Source Voltage  
Symbol Value Unit  
D
V
30  
20  
V
V
A
DSS  
Gate−to−Source Voltage  
V
GS  
Continuous Drain  
Steady  
State  
I
D
T = 25°C  
8.5  
6.8  
1.28  
A
Current R  
(Note 1)  
q
G
JA  
T = 70°C  
A
Power Dissipation R  
(Note 1)  
Steady  
State  
T = 25°C  
A
P
W
A
q
D
JA  
JA  
S
Continuous Drain  
Steady  
State  
I
D
T = 25°C  
A
7.1  
5.7  
Current R  
(Note 2)  
MARKING DIAGRAM/  
PIN ASSIGNMENT  
q
JA  
T = 70°C  
A
Power Dissipation R  
(Note 2)  
T = 25°C  
A
P
I
0.88  
W
A
q
D
1
8
Source  
Source  
Source  
Gate  
Drain  
Drain  
Drain  
Drain  
1
Continuous Drain  
Steady  
State  
T = 25°C  
A
10.5  
8.4  
D
SO−8  
CASE 751  
STYLE 12  
Current R , t v 10 s  
q
JA  
T = 70°C  
A
(Note 1)  
Top View  
Power Dissipation  
Steady  
State  
T = 25°C  
A
P
D
1.95  
W
R
, t v 10 s(Note 1)  
q
JA  
4917N = Device Code  
Pulsed Drain Current  
T = 25°C, t = 10 ms  
A
I
DM  
127  
A
p
A
= Assembly Location  
Y
= Year  
= Work Week  
= Pb−Free Package  
Operating Junction and Storage Temperature  
T ,  
stg  
−55 to  
°C  
J
T
150  
WW  
G
Source Current (Body Diode)  
I
S
2.4  
32  
A
(Note: Microdot may be in either location)  
Single Pulse Drain−to−Source Avalanche Energy  
E
AS  
mJ  
(T = 25°C, V = 30 V, V = 10 V,  
J
DD  
GS  
I = 8 A , L = 1.0 mH, R = 25 W)  
ORDERING INFORMATION  
L
pk  
G
†
Lead Temperature for Soldering Purposes  
T
260  
°C  
L
Device  
Package  
Shipping  
2500/Tape & Reel  
(1/8″ from case for 10 s)  
NTMS4917NR2G  
SO−8  
(Pb−Free)  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
THERMAL RESISTANCE MAXIMUM RATINGS  
Parameter  
Symbol Value Unit  
°C/W  
Junction−to−Ambient – Steady State (Note 1)  
Junction−to−Ambient – t v 10 s (Note 1)  
Junction−to−Foot (Drain)  
R
R
97.4  
64  
q
q
JA  
JA  
R
R
25.9  
142.4  
q
JF  
JA  
Junction−to−Ambient – Steady State (Note 2)  
q
1. Surfacemounted on FR4 board using 1 in sq pad size, 1 oz Cu.  
2. Surfacemounted on FR4 board using the minimum recommended pad size.  
© Semiconductor Components Industries, LLC, 2011  
1
Publication Order Number:  
April, 2011 − Rev. 0  
NTMS4917N/D  
 
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