Datasheet > NTMFS6H800NT1G

NTMFS6H800NT1G

更新时间： 2024-09-16 11:15:03

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	214K
描述
单 N 沟道，功率 MOSFET，80V，203A，2.1mΩ

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NTMFS6H800NT1G 数据手册

MOSFET – Power, Single,

N-Channel

80 V, 2.1 mW, 203 A

NTMFS6H800N

Features

www.onsemi.com

• Small Footprint (5x6 mm) for Compact Design

• Low R

to Minimize Conduction Losses

DS(on)

• Low Q and Capacitance to Minimize Driver Losses

MAX

I MAX

(BR)DSS

DS(ON)

• These Devices are Pb−Free and are RoHS Compliant

80 V

2.1 mW @ 10 V

203 A

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

D (5)

DSS

Gate−to−Source Voltage

Continuous Drain

Current R

= 25°C

= 100°C

= 25°C

203

143

200

100

G (4)

(Notes 1, 3)

Steady

State

Power Dissipation

(Note 1)

S (1,2,3)

N−CHANNEL MOSFET

= 100°C

Continuous Drain

Current R

T = 25°C

T = 100°C

(Notes 1, 2, 3)

Steady

State

MARKING

DIAGRAM

Power Dissipation

T = 25°C

3.8

1.9

900

(Notes 1 & 2)

T = 100°C

Pulsed Drain Current

T = 25°C, t = 10 ms

DFN5 (SO−8FL)

CASE 506EZ

6H800N

AYWZZ

Operating Junction and Storage Temperature

T , T

−55 to

°C

stg

+ 175

Source Current (Body Diode)

166

Single Pulse Drain−to−Source Avalanche

1271

= Assembly Location

= Year

Energy (I

= 16.1 A)

L(pk)

= Work Week

= Lot Traceability

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the

package dimensions section on page 5 of this data sheet.

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

0.75

Unit

Junction−to−Case − Steady State

Junction−to−Ambient − Steady State (Note 2)

°C/W

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.

3. Maximum current for pulses as long as 1 second is higher but is dependent

on pulse duration and duty cycle.

Publication Order Number:

April, 2021 − Rev. 2

NTMFS6H800N/D

12 3 4 5 6 7

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与NTMFS6H800NT1G相关器件

型号	品牌	获取价格	描述	数据表
NTMFS6H801NLT1G	ONSEMI	获取价格	MOSFET - Power, Single N-Channel, 80 V, 2.7 m
NTMFS6H801NT1G	ONSEMI	获取价格	单 N 沟道，功率 MOSFET，80V，153A，2.8mΩ
NTMFS6H818NLT1G	ONSEMI	获取价格	MOSFET - Power, Single, N-Channel, 80 V, 3.2m
NTMFS6H818NT1G	ONSEMI	获取价格	单 N 沟道，功率 MOSFET，80V，123A，3.7mΩ
NTMFS6H824NLT1G	ONSEMI	获取价格	Power MOSFET 80V, 110A, 4.0 mOhm, Single N-Channel, SO8-FL.
NTMFS6H824NT1G	ONSEMI	获取价格	Power MOSFET, Single N-Channel, 80V, 103A, 4.
NTMFS6H836NLT1G	ONSEMI	获取价格	Power MOSFET, Single N-Channel, 80V, 77A, 6.2 mOhm
NTMFS6H848NLT1G	ONSEMI	获取价格	Power MOSFET, Single N-Channel, 80V, 59A, 8.8 mOhm
NTMFS6H852NLT1G	ONSEMI	获取价格	Power MOSFET, Single N-Channel, 80V, 42A, 13.
NTMFS6H858NLT1G	ONSEMI	获取价格	Power MOSFET 80V, 30A, 19.5 mOhm, Single N-Channel, SO8-FL.

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