Datasheet > NTMFS6H864NLT1G

NTMFS6H864NLT1G

更新时间： 2024-09-16 11:14:31

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	221K
描述
MOSFET - Power, Single, N-Channel, 80 V, 29mΩ 22 A - NTMFS6H864NL

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NTMFS6H864NLT1G 数据手册

MOSFET - Power, Single

N-Channel

80 V, 29 mW, 22 A

NTMFS6H864NL

Features

www.onsemi.com

• Small Footprint (5x6 mm) for Compact Design

• Low R

to Minimize Conduction Losses

DS(on)

• Low Q and Capacitance to Minimize Driver Losses

• These Devices are Pb−Free and are RoHS Compliant

MAX

I MAX

(BR)DSS

DS(ON)

29 mW @ 10 V

38 mW @ 4.5 V

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

80 V

22 A

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

DSS

Gate−to−Source Voltage

D (5,6)

Continuous Drain

Current R

= 25°C

= 100°C

= 25°C

(Notes 1, 3)

Steady

State

Power Dissipation

G (4)

(Note 1)

= 100°C

Continuous Drain

Current R

T = 25°C

7.0

S (1,2,3)

N−CHANNEL MOSFET

T = 100°C

(Notes 1, 2, 3)

Steady

State

Power Dissipation

T = 25°C

3.5

1.7

(Notes 1, 2)

T = 100°C

MARKING

DIAGRAM

Pulsed Drain Current

T = 25°C, t = 10 ms

Operating Junction and Storage Temperature

Range

T , T

−55 to

°C

stg

+175

DFN5

(SO−8FL)

CASE 488AA

STYLE 1

6H864L

AYWZZ

Source Current (Body Diode)

Single Pulse Drain−to−Source Avalanche

Energy (I

= 1.0 A)

L(pk)

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

= Assembly Location

= Year

= Work Week

= Lot Traceability

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE MAXIMUM RATINGS

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the

package dimensions section on page 5 of this data sheet.

Parameter

Symbol

Value

4.6

Unit

Junction−to−Case − Steady State

Junction−to−Ambient − Steady State (Note 2)

°C/W

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.

3. Maximum current for pulses as long as 1 second is higher but is dependent

on pulse duration and duty cycle.

Publication Order Number:

March, 2020 − Rev. 0

NTMFS6H864NL/D

12 3 4 5 6 7

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