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NTMFSC012N15MC PDF预览

NTMFSC012N15MC

更新时间： 2024-11-06 11:14:07
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 371K
描述
MOSFET - Power, Dualcool N-Channel, PQFN8, 150V, 11.4mΩ, 80A

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NTMFSC012N15MC 数据手册

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DATA SHEET  
www.onsemi.com  
MOSFET - Power, DUAL  
COOL) N-Channel, PQFN8  
150 V, 11.4 mW, 80 A  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
11.4 mW @ 10 V  
14.5 mW @ 8 V  
44 A  
22 A  
150 V  
NTMFSC012N15MC  
N−CHANNEL MOSFET  
Features  
• Advanced Dual−sided Cooled Packaging  
• Ulra Low R  
DS(on)  
• MSL1 Robust Packaging Design  
Typical Applications  
• Primary DC−DC FET  
• Synchronous Rectifier  
• DC−DC Conversion  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
150  
20  
Unit  
V
V
DSS  
Gate−to−Source Voltage  
V
GS  
V
Continuous Drain Cur- Steady  
T
= 25°C  
= 100°C  
= 25°C  
I
80  
A
C
D
rent R  
(Notes 1, 3)  
State  
q
JC  
T
C
50  
Power Dissipation  
(Note 1)  
T
C
P
147  
58  
W
A
D
D
R
q
JC  
DFN8 5x6.15  
CASE 506EG  
T
C
= 100°C  
Continuous Drain  
Current R  
Steady  
State  
T = 25°C  
A
I
D
10  
q
JA  
T = 100°C  
A
6
(Notes 1, 2, 3)  
MARKING DIAGRAM  
Power Dissipation  
T = 25°C  
A
P
2.7  
1
W
R
(Notes 1, 2)  
q
JA  
T = 100°C  
A
3JAYWZ  
Pulsed Drain Current  
T
= 25°C, t = 10 ms  
I
DM  
1067  
+150  
122  
161  
A
°C  
A
C
p
Operating Junction / Storage Temperature Max  
Source Current (Body Diode)  
T , T  
J stg  
I
S
Single Pulse Drain−to−Source Avalanche  
E
AS  
mJ  
Energy (I  
= 35 A)  
L(pk)  
3J  
= Specific Device Code  
= Assembly Location  
= Year  
= Work Week  
= Assembly Lot Code  
A
Y
W
Z
Lead Temperature Soldering Reflow for Solder-  
ing Purposes (1/8″ from case for 10 s)  
T
L
260  
°C  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
THERMAL RESISTANCE MAXIMUM RATINGS  
ORDERING INFORMATION  
Parameter  
Symbol  
Value  
0.85  
1.5  
Unit  
†
Device  
NTMFSC012N15MC  
Package  
Shipping  
Junction−to−Case − Steady State  
Junction−to−Case Top − Steady State  
Junction−to−Ambient − Steady State (Note 2)  
R
°C/W  
q
JC  
PQFN8  
(Pb−Free)  
3000 / Tape &  
Reel  
R
q
JT  
R
46  
q
JA  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
2
3. Maximum current for pulses as long as 1 second is higher but is dependent  
on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2018  
1
Publication Order Number:  
January, 2023 − Rev. 2  
NTMFSC012N15MC/D  
 
1234567

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