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NTMJS1D4N06CLTWG

更新时间： 2024-09-17 11:15:03
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 371K
描述
Power MOSFET 60 V, 1.3Ω, 262 A, Single N-Channel

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NTMJS1D4N06CLTWG 数据手册

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MOSFET – Power, Single  
N-Channel  
60 V, 1.3 mW, 262 A  
NTMJS1D4N06CL  
Features  
www.onsemi.com  
• Small Footprint (5x6 mm) for Compact Design  
• Low R  
to Minimize Conduction Losses  
DS(on)  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
• Low Q and Capacitance to Minimize Driver Losses  
G
• LFPAK8 Package, Industry Standard  
1.3 mW @ 10 V  
1.8 mW @ 4.5 V  
60 V  
262 A  
• These Devices are Pb−Free and are RoHS Compliant  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
60  
Unit  
V
D (5,8)  
V
DSS  
Gate−to−Source Voltage  
V
GS  
20  
V
Continuous Drain  
Current R  
Steady  
State  
T
= 25°C  
I
D
262  
A
C
G (4)  
q
JC  
T
C
= 100°C  
185  
(Notes 1, 3)  
Power Dissipation  
T
= 25°C  
P
180  
90  
W
A
S (1,2,3)  
N−CHANNEL MOSFET  
C
D
R
(Note 1)  
q
JC  
T
C
= 100°C  
Continuous Drain  
Current R  
Steady  
State  
T = 25°C  
A
I
D
39  
q
JA  
T = 100°C  
A
28  
(Notes 1, 2, 3)  
MARKING  
DIAGRAM  
Power Dissipation  
T = 25°C  
A
P
D
4.0  
2.0  
900  
W
R
(Notes 1 & 2)  
D
D
D
D
q
JA  
T = 100°C  
A
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
A
A
p
1D4N06  
CL  
Operating Junction and Storage Temperature  
T , T  
J
−55 to  
+ 175  
°C  
stg  
LFPAK8  
CASE 760AA  
ALLYW  
Source Current (Body Diode)  
I
S
150  
A
1
Single Pulse Drain−to−Source Avalanche  
E
AS  
1376  
mJ  
S
S
S G  
Energy (I  
= 18.7 A)  
L(pk)  
1D4N06CL = Specific Device Code  
Lead Temperature for Soldering Purposes  
T
260  
°C  
L
A
LL  
Y
= Assembly Location  
= Wafer Lot  
= Year  
(1/8″ from case for 10 s)  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
W
= Work Week  
THERMAL RESISTANCE MAXIMUM RATINGS  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information on  
page 5 of this data sheet.  
Parameter  
Symbol  
Value  
Unit  
Junction−to−Case − Steady State  
R
0.83  
37.8  
°C/W  
q
JC  
Junction−to−Ambient − Steady State (Note 2)  
R
q
JA  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
3. Maximum current for pulses as long as 1 second is higher but is dependent  
on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2018  
1
Publication Order Number:  
November, 2019 − Rev. 0  
NTMJS1D4N06CL/D  
 
1234567

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