NTMS10P02R2G

更新时间： 2024-09-16 06:00:39

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	176K
描述
Power MOSFET −10 Amps, −20 Volts P−Channel Enhancement−Mode

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NTMS10P02R2G 数据手册

NTMS10P02R2

Power MOSFET

−10 Amps, −20 Volts

P−Channel Enhancement−Mode

Single SOIC−8 Package

Features

http://onsemi.com

• Ultra Low R

DS(on)

• Higher Efficiency Extending Battery Life

• Logic Level Gate Drive

−10 AMPERES

−20 VOLTS

14 mW @ V_GS= −4.5 V

• Miniature SOIC−8 Surface Mount Package

• Diode Exhibits High Speed, Soft Recovery

• Avalanche Energy Specified

P−Channel

• SOIC−8 Mounting Information Provided

• Pb−Free Package is Available

Applications

• Power Management in Portable and Battery−Powered Products,

i.e.: Cellular and Cordless Telephones and PCMCIA Cards

MAXIMUM RATINGS

Rating

Symbol

Value

−20

Unit

Vdc

MARKING DIAGRAM &

PIN ASSIGNMENT

Drain−to−Source Voltage

DSS

Gate−to−Source Voltage − Continuous

"12

Thermal Resistance −

Junction−to−Ambient (Note 1)

2.5

−10

−8.0

0.6

−5.5

−50

°C/W

E10P02

AYWW G

Total Power Dissipation @ T = 25°C

SOIC−8

CASE 751

STYLE 12

Continuous Drain Current @ 25°C

Continuous Drain Current @ 70°C

Maximum Operating Power Dissipation

Maximum Operating Drain Current

Pulsed Drain Current (Note 3)

Thermal Resistance −

E10P02 = Specific Device Code

Junction−to−Ambient (Note 2)

°C/W

= Assembly Location

= Year

Total Power Dissipation @ T = 25°C

1.6

Continuous Drain Current @ 25°C

Continuous Drain Current @ 70°C

Maximum Operating Power Dissipation

Maximum Operating Drain Current

Pulsed Drain Current (Note 3)

−8.8

−6.4

0.4

−4.5

−44

= Work Week

= Pb−Free Package

(Note: Microdot may be in either location)

Operating and Storage Temperature Range

T , T

−55 to

+150

°C

stg

ORDERING INFORMATION

†

Single Pulse Drain−to−Source Avalanche En-

500

Device

Package

Shipping

ergy − Starting T = 25°C

(V = −20 Vdc, V = −4.5 Vdc,

NTMS10P02R2

NTMS10P02R2G

SOIC−8

2500/Tape & Reel

Peak I = 5.0 Apk, L = 40 mH, R = 25 W)

SOIC−8

(Pb−Free)

Maximum Lead Temperature for Soldering

Purposes, 1/8″ from case for 10 seconds

260

°C

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Mounted onto a 2″ square FR−4 Board

(1 in sq, Cu 0.06″ thick single sided), t = 10 seconds.

2. Mounted onto a 2″ square FR−4 Board

(1 in sq, Cu 0.06″ thick single sided), t = steady state.

3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2%.

Publication Order Number:

March, 2006 − Rev. 3

NTMS10P02R2/D

12 3 4 5 6

中文翻译

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NTMS10P02R2G 替代型号

型号	品牌	替代类型	描述	数据表
FDS6576	ONSEMI	类似代替	P沟道2.5V额定PowerTrench® MOSFET
NTMS10P02R2	ONSEMI	类似代替	Power MOSFET −10 Amps, −20 Volts P−Channel Enhancement−Mode
DMP2022LSS-13	DIODES	功能相似	SINGLE P-CHANNEL ENHANCEMENT MODE MOSFET

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NTMS4107NR2	ONSEMI	获取价格	Power MOSFET 30 V, 18 A, Single N−Channel, SO−8
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NTMS4117NR2	ONSEMI	获取价格	TRANSISTOR 13300 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, CASE 751-07, SO-8, FET Gen
NTMS4117NR2G	ONSEMI	获取价格	13300mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, CASE 751-07, SO-8
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