NTMJS2D5N06CL
Power MOSFET
60 V, 2.4 mW, 164 A, Single N−Channel
Features
• Small Footprint (5x6 mm) for Compact Design
• Low R
to Minimize Conduction Losses
• Low Q and Capacitance to Minimize Driver Losses
DS(on)
www.onsemi.com
G
• LFPAK8 Package, Industry Standard
• These Devices are Pb−Free and are RoHS Compliant
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
2.4 mW @ 10 V
3.3 mW @ 4.5 V
60 V
164 A
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
60
Unit
V
V
DSS
D (5,8)
Gate−to−Source Voltage
V
GS
20
V
Continuous Drain
Current R
Steady
State
T
= 25°C
I
D
164
A
C
q
JC
T
C
= 100°C
116
(Notes 1, 3)
Power Dissipation
T
= 25°C
P
113
56
W
A
C
D
G (4)
R
(Note 1)
q
JC
T
C
= 100°C
Continuous Drain
Current R
Steady
State
T = 25°C
A
I
D
31
S (1,2,3)
N−CHANNEL MOSFET
q
JA
T = 100°C
A
22
(Notes 1, 2, 3)
Power Dissipation
T = 25°C
P
D
3.9
20
W
A
R
(Notes 1 & 2)
q
JA
T = 100°C
A
MARKING
DIAGRAM
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
900
A
A
p
D
D
D
D
Operating Junction and Storage Temperature
T , T
−55 to
+ 175
°C
J
stg
2D5N06
CL
AWLYW
Source Current (Body Diode)
I
94
A
S
Single Pulse Drain−to−Source Avalanche
E
AS
565
mJ
LFPAK8
CASE 760AA
Energy (I
= 9 A)
L(pk)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
1
S
S
S G
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
2D5N06CL = Specific Device Code
A
WL
Y
= Assembly Location
= Wafer Lot
= Year
THERMAL RESISTANCE MAXIMUM RATINGS
W
= Work Week
Parameter
Symbol
Value
Unit
Junction−to−Case − Steady State
R
1.3
38
°C/W
q
JC
ORDERING INFORMATION
Junction−to−Ambient − Steady State (Note 2)
R
q
JA
See detailed ordering, marking and shipping information on
page 5 of this data sheet.
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
March, 2019 − Rev. 0
NTMJS2D5N06CL/D