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NTMJS2D5N06CLTWG PDF预览

NTMJS2D5N06CLTWG

更新时间: 2024-09-17 11:10:23
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 349K
描述
功率 MOSFET,60 V,2.5 mΩ,150 A,单 N 沟道

NTMJS2D5N06CLTWG 数据手册

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NTMJS2D5N06CL  
Power MOSFET  
60 V, 2.4 mW, 164 A, Single NChannel  
Features  
Small Footprint (5x6 mm) for Compact Design  
Low R  
to Minimize Conduction Losses  
Low Q and Capacitance to Minimize Driver Losses  
DS(on)  
www.onsemi.com  
G
LFPAK8 Package, Industry Standard  
These Devices are PbFree and are RoHS Compliant  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
2.4 mW @ 10 V  
3.3 mW @ 4.5 V  
60 V  
164 A  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
DraintoSource Voltage  
Symbol  
Value  
60  
Unit  
V
V
DSS  
D (5,8)  
GatetoSource Voltage  
V
GS  
20  
V
Continuous Drain  
Current R  
Steady  
State  
T
= 25°C  
I
D
164  
A
C
q
JC  
T
C
= 100°C  
116  
(Notes 1, 3)  
Power Dissipation  
T
= 25°C  
P
113  
56  
W
A
C
D
G (4)  
R
(Note 1)  
q
JC  
T
C
= 100°C  
Continuous Drain  
Current R  
Steady  
State  
T = 25°C  
A
I
D
31  
S (1,2,3)  
NCHANNEL MOSFET  
q
JA  
T = 100°C  
A
22  
(Notes 1, 2, 3)  
Power Dissipation  
T = 25°C  
P
D
3.9  
20  
W
A
R
(Notes 1 & 2)  
q
JA  
T = 100°C  
A
MARKING  
DIAGRAM  
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
900  
A
A
p
D
D
D
D
Operating Junction and Storage Temperature  
T , T  
55 to  
+ 175  
°C  
J
stg  
2D5N06  
CL  
AWLYW  
Source Current (Body Diode)  
I
94  
A
S
Single Pulse DraintoSource Avalanche  
E
AS  
565  
mJ  
LFPAK8  
CASE 760AA  
Energy (I  
= 9 A)  
L(pk)  
Lead Temperature for Soldering Purposes  
(1/8from case for 10 s)  
T
L
260  
°C  
1
S
S
S G  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
2D5N06CL = Specific Device Code  
A
WL  
Y
= Assembly Location  
= Wafer Lot  
= Year  
THERMAL RESISTANCE MAXIMUM RATINGS  
W
= Work Week  
Parameter  
Symbol  
Value  
Unit  
JunctiontoCase Steady State  
R
1.3  
38  
°C/W  
q
JC  
ORDERING INFORMATION  
JunctiontoAmbient Steady State (Note 2)  
R
q
JA  
See detailed ordering, marking and shipping information on  
page 5 of this data sheet.  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2
2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
3. Maximum current for pulses as long as 1 second is higher but is dependent  
on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2018  
1
Publication Order Number:  
March, 2019 Rev. 0  
NTMJS2D5N06CL/D  
 

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