Datasheet > NTMKE4894N

NTMKE4894N

更新时间： 2024-09-17 01:11:19

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	128K
描述
Single NâChannel Power MOSFET

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中文翻译

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数据手册

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NTMKE4894N 数据手册

NTMKE4894N

Power MOSFET

25 V, 160 A, Single N−Channel, ICEPAK

Features

• Low Package Inductance

• Low R

to Minimize Conduction Losses

DS(on)

• Low Capacitance to Minimize Driver Losses

• Optimized Gate Charge to Minimize Switching Losses

• Dual Sided Cooling Capability

http://onsemi.com

MAX

I MAX

(BR)DSS

DS(ON)

• Compatible with MX Footprint and Outline

• This is a Pb−Free Device

1.7 mW @ 10 V

2.4 mW @ 4.5 V

25 V

160 A

Applications

• CPU Power Delivery

• DC−DC Converters

• Optimized for Control FET

MARKING

DIAGRAM

ICEPAK

E PAD

CASE 145AB

E4894

AYWWG

MAXIMUM RATINGS (T = 25°C unless otherwise stated)

Parameter

Drain−to−Source Voltage

Symbol Value Unit

DSS

Gate−to−Source Voltage

E4894= Specific Device Code

Continuous Drain

T = 25°C

= Assembly Location

= Year

Current R

(Note 1)

T = 70°C

26.4

2.8

WW = Work Week

Power Dissipation R

(Note 1)

T = 25°C

= Pb−Free Package

(Note: Microdot may be in either location)

Continuous Drain

Current R

T = 25°C

160

88.6

J−PCB

T = 70°C

Steady

State

(Note 2)

Power Dissipation

T = 25°C

(Note 2)

J−PCB

Continuous Drain

Current R (Note 1)

= 25°C

= 70°C

= 25°C

170

136

73.5

Power Dissipation

(Note 1)

Pulsed Drain Current

T = 25°C, t = 10 ms

250

Current Limited by Package

T = 25°C

Dmax

N−CHANNEL MOSFET

Operating Junction and Storage Temperature

T ,

−40 to

150

°C

stg

ORDERING INFORMATION

Source Current (Body Diode) (Note 1)

Drain to Source DV/DT

6.0

577

†

Device

Package

Shipping

dV/dt

V/ns

Single Pulse Drain−to−Source Avalanche Energy

NTMKE4894NT1G ICEPAK 1500/Tape & Reel

(T = 25°C, V = 25 V, V = 10 V,

(Pb−Free)

I = 62 A , L = 0.3 mH, R = 25 W)

NTMKE4894NT3G ICEPAK 5000/Tape & Reel

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

270

°C

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surfacemounted on FR4 board using 1 sq−in pad, 1 oz Cu.

2. Measured with a T of approximately 90°C using 1 oz Cu board.

3. Surfacemounted on FR4 board using 1 sq−in pad, 2 oz Cu.

Publication Order Number:

January, 2011 − Rev. 3

NTMKE4894N/D

12 3 4 5 6

中文翻译

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与NTMKE4894N相关器件

型号	品牌	获取价格	描述	数据表
NTMKE4894NT1G	ONSEMI	获取价格	Single NâChannel Power MOSFET
NTMKE4894NT3G	ONSEMI	获取价格	Single NâChannel Power MOSFET
N-TMP-1(40)	HRS	获取价格	RF Connector
N-TMP-1-1	HRS	获取价格	Non-reflective Terminations (N, TNC, SSMA, POB, FL, and PO6)
N-TMP-1-1(40)	HRS	获取价格	RF/Microwave Termination, 0MHz Min, 8000MHz Max, 50ohm, ROHS COMPLIANT PACKAGE
N-TMP-1-1(50)	HRS	获取价格	RF N Connector
N-TMP-3-2	HRS	获取价格	Non-reflective Terminations (N, TNC, SSMA, POB, FL, and PO6)
N-TMP-3-2(40)	HRS	获取价格	RF/Microwave Termination, 0MHz Min, 6000MHz Max, 50ohm, ROHS COMPLIANT PACKAGE
N-TMP-5	HRS	获取价格	Non-reflective Terminations (N, TNC, SSMA, POB, FL, and PO6)
N-TMP-5(40)	HRS	获取价格	RF/Microwave Termination, 0MHz Min, 6000MHz Max, 50ohm, ROHS COMPLIANT PACKAGE

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