Datasheet > NTMS4107N

NTMS4107N

更新时间： 2024-09-15 21:54:03

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	64K
描述
Power MOSFET 30 V, 18 A, Single N−Channel, SO−8

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中文翻译

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NTMS4107N 数据手册

NTMS4107N

Power MOSFET

30 V, 18 A, Single N−Channel, SO−8

Features

• Ultra Low R

(at 4.5 V ), Low Gate Resistance and Low Q

GS G

DS(on)

• Optimized for Low Side Synchronous Applications

• High Speed Switching Capability

http://onsemi.com

Applications

TYP

I MAX

(BR)DSS

DS(on)

• Notebook Computer Vcore Applications

• Network Applications

• DC−DC Converters

3.4 mW @ 10 V

4.7 mW @ 4.5 V

30 V

18 A

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Drain−to−Source Voltage

Symbol Value Unit

$20

DSS

Gate−to−Source Voltage

Continuous Drain

Current (Note 1)

T = 25°C

Steady

State

T = 85°C

t v10 s T = 25°C

Power Dissipation

(Note 1)

Steady

State

1.67

MARKING DIAGRAM/

PIN ASSIGNMENT

T = 25°C

t v10 s

2.5

Continuous Drain

Current (Note 2)

T = 25°C

Source

Gate

Drain

Steady

State

T = 85°C

8.0

0.93

Power Dissipation

(Note 2)

T = 25°C

SO−8

CASE 751

STYLE 12

Pulsed Drain Current

t = 10 ms

(Top View)

Operating Junction and Storage Temperature

T , T

−55 to

150

°C

stg

Continuous Source Current (Body Diode)

Single Pulse Drain−to−Source Avalanche

3.0

4107N = Specific Device Code

= Assembly Location

= Wafer Lot

880

Energy (V = 30 V, V = 10 V, I = 42 A,

= Year

= Work Week

L = 1 mH, R = 25 W)

Lead Temperature for Soldering Purposes

260

°C

(1/8″ from case for 10 s)

ORDERING INFORMATION

THERMAL RESISTANCE RATINGS

Rating

Symbol

Max

Unit

Device

NTMS4107NR2

Package

Shipping†

Junction−to−Ambient − Steady State (Note 1)

Junction−to−Ambient − t v 10 s (Note 1)

Junction−to−Ambient − Steady State (Note 2)

°C/W

SO−8

2500/Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

135

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. Surface−mounted on FR4 board using 1″ sq. pad size

(Cu area = 1.127″ sq. [1 oz] including traces).

2. Surface−mounted on FR4 board using the minimum recommended pad size

(Cu area = 0.412″ sq.).

Semiconductor Components Industries, LLC, 2005

Publication Order Number:

March, 2005 − Rev. 1

NTMS4107N/D

12 3 4 5 6

中文翻译

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与NTMS4107N相关器件

型号	品牌	获取价格	描述	数据表
NTMS4107NR2	ONSEMI	获取价格	Power MOSFET 30 V, 18 A, Single N−Channel, SO−8
NTMS4107NR2G	ONSEMI	获取价格	Power MOSFET 30V 18A 3.4 mOhm Single N-Channel SO-8
NTMS4117NR2	ONSEMI	获取价格	TRANSISTOR 13300 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, CASE 751-07, SO-8, FET Gen
NTMS4117NR2G	ONSEMI	获取价格	13300mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, CASE 751-07, SO-8
NTMS4118NR2	ONSEMI	获取价格	9000mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, CASE 751-07, SOP-8
NTMS4118NR2G	ONSEMI	获取价格	TRANSISTOR 9000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, CASE 751-07, SOP
NTMS4176P	ONSEMI	获取价格	Power MOSFET -30 V, -9.6 A, P-Channel, SOIC-8
NTMS4176PR2G	ONSEMI	获取价格	Power MOSFET -30 V, -9.6 A, P-Channel, SOIC-8
NTMS4177P	ONSEMI	获取价格	Power MOSFET -30 V, -11.4 A, P-Channel, SOIC-8
NTMS4177PR	UMW	获取价格	种类:P-Channel;漏源电压（Vdss）:-30V;持续漏极电流（Id）（在25°C

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