Datasheet > NTMS4706N

NTMS4706N

更新时间： 2024-09-15 06:00:39

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	68K
描述
Power MOSFET 30 V, 10.3 A, Single N−Channel, SO−8

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NTMS4706N 数据手册

NTMS4706N

Power MOSFET

30 V, 10.3 A, Single N−Channel, SO−8

Features

• Low R

DS(on)

• Low Gate Charge

• Standard SO−8 Single Package

• Pb−Free Package is Available

http://onsemi.com

DS(ON)

TYP

I MAX

(Note 1)

(BR)DSS

Applications

• Notebooks, Graphics Cards

• Synchronous Rectification

• High Side Switch

9.0 mW @ 10 V

30 V

10.3 A

11.4 mW @ 4.5 V

• DC−DC Converters

N−Channel

MAXIMUM RATINGS (T = 25°C unless otherwise stated)

Parameter

Drain−to−Source Voltage

Symbol Value Unit

DSS

Gate−to−Source Voltage

Continuous Drain

Current (Note 1)

Steady

State

T = 25°C

8.6

6.2

T = 85°C

t v 10 s T = 25°C

10.3

1.5

Power Dissipation

(Note 1)

T = 25°C

Steady

State

MARKING DIAGRAM/

PIN ASSIGNMENT

t v 10 s

2.2

6.4

Continuous Drain

Current (Note 2)

Steady

State

T = 25°C

T = 85°C

4.6

Source

Gate

Drain

Power Dissipation

(Note 2)

T = 25°C

0.83

Pulsed Drain Current

t = 10 ms

SO−8

CASE 751

STYLE 12

Operating Junction and Storage Temperature

T ,

stg

−55 to

150

°C

Top View

Source Current (Body Diode)

2.1

4706N = Device Code

Single Pulse Drain−to−Source Avalanche Energy

150

= Assembly Location

(V = 25 V, V = 10 V, I Peak = 7.5 A,

= WaferLot

L = 10 mH, R = 25 W)

= Year

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

= Work Week

= Pb−Free Package

(Note: Microdot may be in either location)

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol Value Unit

ORDERING INFORMATION

°C/W

Junction−to−Ambient – Steady State (Note 1)

Junction−to−Ambient – t v 10 s (Note 1)

Junction−to−Ambient – Steady State (Note 2)

83.5

†

Device

Package

Shipping

NTMS4706NR2

NTMS4706NR2G

SO−8

2500/Tape & Reel

150

SO−8

(Pb−Free)

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

1. Surfacemounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq

[1 oz] including traces).

2. Surfacemounted on FR4 board using the minimum recommended pad size.

*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting

Techniques Reference Manual, SOLDERRM/D.

Semiconductor Components Industries, LLC, 2005

Publication Order Number:

November, 2005 − Rev. 3

NTMS4706N/D

12 3 4 5 6

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与NTMS4706N相关器件

型号	品牌	获取价格	描述	数据表
NTMS4706NR2	ONSEMI	获取价格	Power MOSFET 30 V, 10.3 A, Single N−Channel, SO−8
NTMS4706NR2G	ONSEMI	获取价格	Power MOSFET 30 V, 10.3 A, Single N−Channel, SO−8
NTMS4800N	ONSEMI	获取价格	Power MOSFET 30 V, 8 A, N−Channel, SOIC−8
NTMS4800NR2G	ONSEMI	获取价格	Power MOSFET 30 V, 8 A, N−Channel, SOIC−8
NTMS4801N	ONSEMI	获取价格	Power MOSFET 30 V, 12 A, N−Channel, SO−8
NTMS4801NR2G	ONSEMI	获取价格	Power MOSFET 30 V, 12 A, N−Channel, SO−8
NTMS4802N	ONSEMI	获取价格	Power MOSFET 30 V, 18 A, N−Channel, SO−8
NTMS4802NR2G	ONSEMI	获取价格	Power MOSFET 30 V, 18 A, N−Channel, SO−8
NTMS4807N	ONSEMI	获取价格	Power MOSFET 30 V, 14.8 A, N-Channel, SO-8
NTMS4807NR2G	ONSEMI	获取价格	Power MOSFET 30 V, 14.8 A, N-Channel, SO-8

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