Datasheet > NTMS4176PR2G

NTMS4176PR2G

更新时间： 2024-11-09 10:30:19

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
5页	87K
描述
Power MOSFET -30 V, -9.6 A, P-Channel, SOIC-8

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中文翻译

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数据手册
替代型号

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NTMS4176PR2G 数据手册

NTMS4176P

Power MOSFET

-30 V, -9.6 A, P-Channel, SOIC-8

Features

•ꢀLow R

) to Minimize Conduction Losses

DS(on

•ꢀLow Capacitance to Minimize Driver Losses

•ꢀOptimized Gate Charge to Minimize Switching Losses

•ꢀSOIC-8 Surface Mount Package Saves Board Space

•ꢀThis is a Pb-Free Device

http://onsemi.com

Max

DS(on)

Max

(BR)DSS

18 mW @ -10 V

30 mW @ -4.5 V

-30 V

-9.6 A

Applications

•ꢀLoad Switches

•ꢀNotebook PC's

•ꢀDesktop PC's

P-Channel

MAXIMUM RATINGS (T = 25°C unless otherwise stated)

Rating

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain

Symbol

Value

-30

Unit

DSS

T = 25°C

-7.3

-5.8

1.44

Current R

(Note 1)

T = 70°C

Power Dissipation

(Note 1)

T = 25°C

MARKING DIAGRAM

& PIN ASSIGNMENT

Continuous Drain

Current R (Note 2)

T = 25°C

-5.5

-4.4

0.81

T = 70°C

Steady

State

D D D

Power Dissipation

(Note 2)

T = 25°C

4176P

AYWW

SOIC-8

CASE 751

STYLE 12

Continuous Drain

Current R

(Note 1)

T = 25°C

-9.6

-7.7

2.5

t < 10 s

T = 70°C

S S G

Power Dissipation

t < 10 s (Note 1)

T = 25°C

4176P = Device Code

= Assembly Location

= Year

= Work Week

Pulsed Drain Current

T = 25°C,

t = 10 ms

-39

Operating Junction and Storage Temperature

Source Current (Body Diode)

T , T

-55 to

+150

°C

STG

= Pb-Free Package

-2.1

ORDERING INFORMATION

Single Pulse Drain-to-Source Avalanche

Energy T = 25°C, V = 30 V, V = 10 V,

EAS

112.5

I = 15 A , L = 1.0 mH, R = 25 W

†

Device

NTMS4176PR2G

Package

Shipping

2500/Tape & Reel

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

SOIC-8

(Pb-Free)

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface-mounted on FR4 board using 1 inch sq pad size, 1 oz Cu.

2. Surface-mounted on FR4 board using the minimum recommended pad size.

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

March, 2008 - Rev. 0

Publication Order Number:

NTMS4176P/D

12 3 4 5

中文翻译

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NTMS4176PR2G 替代型号

型号	品牌	替代类型	描述	数据表
NTMS4177PR2G	ONSEMI	类似代替	Power MOSFET -30 V, -11.4 A, P-Channel, SOIC-8

与NTMS4176PR2G相关器件

型号	品牌	获取价格	描述	数据表
NTMS4177P	ONSEMI	获取价格	Power MOSFET -30 V, -11.4 A, P-Channel, SOIC-8
NTMS4177PR	UMW	获取价格	种类:P-Channel;漏源电压（Vdss）:-30V;持续漏极电流（Id）（在25°C
NTMS4177PR2G	ONSEMI	获取价格	Power MOSFET -30 V, -11.4 A, P-Channel, SOIC-8
NTMS4404	ONSEMI	获取价格	Power MOSFET
NTMS4404NR2	ONSEMI	获取价格	Power MOSFET
NTMS4503N	ONSEMI	获取价格	Power MOSFET
NTMS4503NR2	ONSEMI	获取价格	Power MOSFET
NTMS4503NR2G	ONSEMI	获取价格	功率 MOSFET，28V，14A，7mΩ，单 N 沟道，SO-8
NTMS4700NR2	ROCHESTER	获取价格	8600mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, CASE 751-07, SOP-8
NTMS4700NR2	ONSEMI	获取价格	8600mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, CASE 751-07, SOP-8

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