Datasheet > NTMS4802N

NTMS4802N

更新时间： 2024-09-15 06:00:43

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
5页	112K
描述
Power MOSFET 30 V, 18 A, N−Channel, SO−8

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NTMS4802N 数据手册

NTMS4802N

Power MOSFET

30 V, 18 A, N−Channel, SO−8

Features

• Low R

to Minimize Conduction Losses

DS(on)

• Low Capacitance to Minimize Driver Losses

• Optimized Gate Charge to Minimize Switching Losses

• This is a Pb−Free Device

http://onsemi.com

MAX

I MAX

(BR)DSS

DS(ON)

Applications

4.0 mW @ 10 V

5.5 mW @ 4.5 V

30 V

18 A

• DC−DC Converters

• Synchronous MOSFET

• Printers

N−Channel

MAXIMUM RATINGS (T = 25°C unless otherwise stated)

Parameter

Drain−to−Source Voltage

Symbol Value Unit

DSS

Gate−to−Source Voltage

Continuous Drain

T = 25°C

Current R

(Note 1)

T = 70°C

Power Dissipation R

(Note 1)

T = 25°C

1.66

MARKING DIAGRAM/

PIN ASSIGNMENT

Continuous Drain

T = 25°C

11.1

8.9

Current R

(Note 2)

T = 70°C

Steady

State

Source

Gate

Drain

Power Dissipation R

(Note 2)

T = 25°C

0.91

SO−8

CASE 751

STYLE 12

Continuous Drain

T = 25°C

Current R , t v 10 s

T = 70°C

(Note 1)

Top View

Power Dissipation

T = 25°C

2.5

4802N = Device Code

, t v 10 s(Note 1)

= Assembly Location

= Year

= Work Week

= Pb−Free Package

Pulsed Drain Current

T = 25°C, t = 10 ms

Operating Junction and Storage Temperature

T ,

−55 to

150

°C

stg

(Note: Microdot may be in either location)

Source Current (Body Diode)

2.5

Single Pulse Drain−to−Source Avalanche Energy

420

ORDERING INFORMATION

(T = 25°C, V = 30 V, V = 10 V,

†

I = 29 A , L = 1.0 mH, R = 25 W)

Device

Package

Shipping

2500/Tape & Reel

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

NTMS4802NR2G

SO−8

(Pb−Free)

THERMAL RESISTANCE MAXIMUM RATINGS

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Parameter

Symbol Value Unit

°C/W

Junction−to−Ambient – Steady State (Note 1)

Junction−to−Ambient – t v 10 s (Note 1)

Junction−to−Foot (Drain)

75.5

50.5

Junction−to−Ambient – Steady State (Note 2)

138

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surfacemounted on FR4 board using 1 in sq pad size.

2. Surfacemounted on FR4 board using the minimum recommended pad size.

Publication Order Number:

December, 2008 − Rev. 0

NTMS4802N/D

12 3 4 5

中文翻译

下载PDF

与NTMS4802N相关器件

型号	品牌	获取价格	描述	数据表
NTMS4802NR2G	ONSEMI	获取价格	Power MOSFET 30 V, 18 A, N−Channel, SO−8
NTMS4807N	ONSEMI	获取价格	Power MOSFET 30 V, 14.8 A, N-Channel, SO-8
NTMS4807NR2G	ONSEMI	获取价格	Power MOSFET 30 V, 14.8 A, N-Channel, SO-8
NTMS4816N	ONSEMI	获取价格	Power MOSFET 30 V, 11 A, N-Channel, SO-8
NTMS4816NR2G	ONSEMI	获取价格	Power MOSFET 30 V, 11 A, N-Channel, SO-8
NTMS4816NR2G	UMW	获取价格	种类:N-Channel;漏源电压（Vdss）:30V;持续漏极电流（Id）（在25°C时
NTMS4840N	ONSEMI	获取价格	Power MOSFET 30 V, 7.5 A, Single N−Channel, SOIC−8
NTMS4840NR2G	ONSEMI	获取价格	Power MOSFET 30 V, 7.5 A, Single N−Channel, SOIC−8
NTMS4872N	ONSEMI	获取价格	Power MOSFET 30 V, 10.2 A, N−Channel, SO−8
NTMS4872NR2G	ONSEMI	获取价格	Power MOSFET 30 V, 10.2 A, N−Channel, SO−8

与NTMS4802N相关文章

摩尔斯微电子在美国约书亚树国家公园测试 Wi-Fi HaLow
2024-09-18

4
贸泽上架Tallysman TW5386智能GNSS天线
2024-09-18

4
SL74HC10N：高性能三输入与非门解析
2024-09-03

83
AIC1781A 电池充电控制器深度解析
2024-09-03

75

产品中心

服务支持

精选活动

关于我们

帮助中心

NTMS4802N

NTMS4802N 数据手册

与NTMS4802N相关器件

与NTMS4802N相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

NTMS4802N

NTMS4802N 数据手册

与NTMS4802N相关器件

与NTMS4802N相关文章

您还可以找

您在本页遇到什么问题？