NTMS4705NR2

更新时间： 2024-11-09 06:00:39

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
5页	91K
描述
Power MOSFET 30 V, 12 A, Single N-Channel, SO-8

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中文翻译

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替代型号

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NTMS4705NR2 数据手册

NTMS4705N

Power MOSFET

30 V, 12 A, Single N-Channel, SO-8

Features

•ꢀLow R

DS(on)

•ꢀLow Gate Charge

http://onsemi.com

•ꢀStandard SO-8 Single Package

•ꢀPb-Free Package is Available

Applications

TYP

I MAX

(Note 1)

(BR)DSS

DS(ON)

•ꢀNotebooks, Graphics Cards

•ꢀSynchronous Rectification

•ꢀHigh Side Switch

8.0 mW @ 10 V

30 V

12 A

10.5 mW @ 4.5 V

•ꢀDC-DC Converters

N-Channel

MAXIMUM RATINGS (T = 25°C unless otherwise stated)

Parameter

Drain-to-Source Voltage

Symbol Value Unit

DSS

Gate-to-Source Voltage

T = 25°C

Continuous Drain

Current (Note 1)

Steady

State

T = 85°C

7.2

t v 10 s T = 25°C

Steady

State

1.52

Power Dissipation

(Note 1)

T = 25°C

MARKING DIAGRAM/

PIN ASSIGNMENT

t v 10 s

2.3

7.4

T = 25°C

Continuous Drain

Current (Note 2)

Steady

State

Source

Gate

Drain

T = 85°C

5.3

SO-8

CASE 751

STYLE 12

Power Dissipation

(Note 2)

T = 25°C

0.85

Top View

Pulsed Drain Current

t = 10 ms

Operating Junction and Storage Temperature

T ,

stg

-55 to

150

°C

4705N = Device Code

= Assembly Location

= Year

= Work Week

Source Current (Body Diode)

3.0

Single Pulse Drain-to-Source Avalanche Energy

(V = 25 V, V = 10 V, Peak I = 7.5 A,

210

= Pb-Free Package

DD GS

L = 10 mH, R = 25 W)

(Note: Microdot may be in either location)

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

ORDERING INFORMATION

THERMAL RESISTANCE MAXIMUM RATINGS

†

Device

Package

Shipping

Parameter

Symbol Value Unit

NTMS4705NR2

SO-8

2500/Tape & Reel

Junction-to-Ambient – Steady State (Note 1)

Junction-to-Ambient – t v 10 s (Note 1)

Junction-to-Ambient – Steady State (Note 2)

°C/W

NTMS4705NR2G

SO-8

(Pb-Free)

147

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface mounted on FR4 board using 1 in sq pad size

(Cu area = 1.127 in sq [1 oz] including traces).

2. Surface mounted on FR4 board using the minimum recommended pad size.

October, 2007 - Rev. 3

Publication Order Number:

NTMS4705N/D

12 3 4 5

中文翻译

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NTMS4705NR2 替代型号

型号	品牌	替代类型	描述	数据表
NTMS4705NR2G	ONSEMI	类似代替	Power MOSFET 30 V, 12 A, Single N-Channel, SO-8

与NTMS4705NR2相关器件

型号	品牌	获取价格	描述	数据表
NTMS4705NR2G	ONSEMI	获取价格	Power MOSFET 30 V, 12 A, Single N-Channel, SO-8
NTMS4706N	ONSEMI	获取价格	Power MOSFET 30 V, 10.3 A, Single N−Channel, SO−8
NTMS4706NR2	ONSEMI	获取价格	Power MOSFET 30 V, 10.3 A, Single N−Channel, SO−8
NTMS4706NR2G	ONSEMI	获取价格	Power MOSFET 30 V, 10.3 A, Single N−Channel, SO−8
NTMS4800N	ONSEMI	获取价格	Power MOSFET 30 V, 8 A, N−Channel, SOIC−8
NTMS4800NR2G	ONSEMI	获取价格	Power MOSFET 30 V, 8 A, N−Channel, SOIC−8
NTMS4801N	ONSEMI	获取价格	Power MOSFET 30 V, 12 A, N−Channel, SO−8
NTMS4801NR2G	ONSEMI	获取价格	Power MOSFET 30 V, 12 A, N−Channel, SO−8
NTMS4802N	ONSEMI	获取价格	Power MOSFET 30 V, 18 A, N−Channel, SO−8
NTMS4802NR2G	ONSEMI	获取价格	Power MOSFET 30 V, 18 A, N−Channel, SO−8

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