Datasheet > NTMS4177PR

NTMS4177PR

更新时间： 2024-09-14 17:15:39

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
6页	373K
描述
种类:P-Channel;漏源电压（Vdss）:-30V;持续漏极电流（Id）（在25°C时）:-11.4A;Vgs(th)(V):±20;漏源导通电阻:12mΩ@-10V

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NTMS4177PR 数据手册

UMW

NTMS4177

-30V P-Channel MOSFET

Applications

•ꢀLoad Switches

•ꢀNotebook PC's

•ꢀDesktop PC's

Features

P-Channel

V_DS(V) = -30V

•

I_D= -11.4A (V_GS= -10V)

•

R_DS(ON)< 12mΩ (V_GS= -10V)

•

R_DS(ON)< 19mΩ (V_GS= -4.5V)

•ꢀLow R_DS(on) to Minimize Conduction Losses

•ꢀLow Capacitance to Minimize Driver Losses

•ꢀOptimized Gate Charge to Minimize Switching

Losses

•ꢀSOP-8 Surface Mount Package Saves Board Space

MAXIMUM RATINGS (T = 25°C unless otherwise stated)

R ating

Sym bol

Value

-30

U nit

D rain-to-Source Voltage

G ate-to-Source Voltage

D SS

G S

C ontinuous D rain

C urrent R

T = 25°C

-8.9

-7.1

1.52

(N ote 1)

T = 70°C

Power Dissipation

(Note 1)

T = 25°C

Continuous Drain

Current R (Note 2)

T = 25°C

-6.6

-5.3

0.84

T = 70°C

Steady

State

Power Dissipation

(Note 2)

T = 25°C

Continuous Drain

Current R t < 10 s

(Note 1)

T = 25°C

-11.4

-9.3

2.5

T = 70°C

Power Dissipation

t < 10 s (Note 1)

T = 25°C

Pulsed Drain Current

T = 25°C,

-46

t = 10 ms

Operating Junction and Storage Temperature

Source Current (Body Diode)

T , T

-55 to

+150

°C

STG

-2.1

200

Single Pulse Drain-to-Source Avalanche

Energy T = 25°C, V = 30 V, V = 10 V,

EAS

I = 20 A , L = 1.0 mH, R = 25 W

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional

operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface-mounted on FR4 board using 1 inch sq pad size, 1 oz Cu.

2. Surface-mounted on FR4 board using the minimum recommended pad size.

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6

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