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NTMS4503N

更新时间： 2024-11-09 03:45:51
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 60K
描述
Power MOSFET

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中文翻译

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NTMS4503N 数据手册

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NTMS4503N  
Power MOSFET  
28 V, 14 A, N−Channel, SO−8  
Features  
• Low RDS(on)  
http://onsemi.com  
• High Power and Current Handling Capability  
• Low Gate Charge  
I
D
MAX  
V
R
TYP  
DS(on)  
(Note 1)  
(BR)DSS  
Applications  
7.0 mW @ 10 V  
8.8 mW @ 4.5 V  
• DC/DC Converters  
• Motor Drives  
28 V  
14 A  
• Synchronous Rectifier − POL  
• Buck Low−Side  
D
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Drain−to−Source Voltage  
Symbol Value Unit  
G
V
DSS  
28  
V
V
A
Gate−to−Source Voltage − Continuous  
V
$20  
GS  
S
Drain Current  
I
D
Continuous @ T = 25°C (Note 1)  
14  
12  
9.0  
40  
a
Continuous @ T = 25°C (Note 2)  
a
Continuous @ T = 25°C (Note 3)  
MARKING DIAGRAM/  
PIN ASSIGNMENT  
a
Single Pulse (tp = 10 ms)  
I
DM  
8
Total Power Dissipation  
T = 25°C (Note 1)  
A
P
D
W
2.5  
1
8
T = 25°C (Note 2)  
T = 25°C (Note 3)  
A
1.66  
0.93  
A
Source  
Source  
Source  
Gate  
Drain  
Drain  
Drain  
Drain  
1
Operating and Storage Temperature  
T , T  
−55 to  
150  
°C  
SO−8  
CASE 751  
STYLE 12  
J
stg  
(Top View)  
Single Pulse Drain−to−Source Avalanche  
E
AS  
75  
mJ  
Energy − Starting T = 25°C  
J
(V = 30 V, V = 10 V, I = 12.2 A,  
4503N = Specific Device Code  
DD  
GS  
L
L = 1.0 mH, R = 25 W)  
A
L
Y
W
= Assembly Location  
= Wafer Lot  
= Year  
G
Maximum Lead Temperature for Soldering  
Purposes, 1/8″ from case for 10 seconds  
T
L
260  
°C  
= Work Week  
THERMAL RESISTANCE RATINGS  
Rating  
Symbol Value Unit  
°C/W  
ORDERING INFORMATION  
Thermal Resistance  
R
q
JA  
Device  
NTMS4503NR2  
Package  
Shipping†  
Junction−to−Ambient (Note 1)  
Junction−to−Ambient (Note 2)  
Junction−to−Ambient (Note 3)  
50  
75  
135  
SO−8  
2500/Tape & Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
1. Surface−mounted on FR4 board using minimum recommended pad size  
2
(Cu area 0.412 in ), t < 10 s.  
2. Surface−mounted on FR4 board using 1″ pad size (Cu area 1.127 in ) steady  
2
state.  
3. Surface−mounted on FR4 board using minimum recommended pad size  
2
(Cu area 0.412 in ), steady state.  
Semiconductor Components Industries, LLC, 2003  
1
Publication Order Number:  
November, 2003 − Rev. 0  
NTMS4503N/D  
 
123456

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