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NTMS10P02R2

更新时间： 2024-11-09 06:00:39
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 176K
描述
Power MOSFET −10 Amps, −20 Volts P−Channel Enhancement−Mode

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中文翻译

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NTMS10P02R2 技术参数

是否无铅： 含铅生命周期：Obsolete
零件包装代码：SOT包装说明：SMALL OUTLINE, R-PDSO-G8
针数：8Reach Compliance Code：not_compliant
ECCN代码：EAR99Factory Lead Time：1 week
风险等级：5.18其他特性：AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：20 V
最大漏极电流 (Abs) (ID)：4.5 A最大漏极电流 (ID)：8.8 A
最大漏源导通电阻：0.014 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss)：1010 pFJESD-30 代码：R-PDSO-G8
JESD-609代码：e0湿度敏感等级：1
元件数量：1端子数量：8
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：240
极性/信道类型：P-CHANNEL最大功率耗散 (Abs)：0.4 W
认证状态：Not Qualified子类别：Other Transistors
表面贴装：YES端子面层：Tin/Lead (Sn80Pb20)
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：30晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

NTMS10P02R2 数据手册

 浏览型号NTMS10P02R2的Datasheet PDF文件第2页浏览型号NTMS10P02R2的Datasheet PDF文件第3页浏览型号NTMS10P02R2的Datasheet PDF文件第4页浏览型号NTMS10P02R2的Datasheet PDF文件第5页浏览型号NTMS10P02R2的Datasheet PDF文件第6页 
NTMS10P02R2  
Power MOSFET  
−10 Amps, −20 Volts  
P−Channel Enhancement−Mode  
Single SOIC−8 Package  
Features  
http://onsemi.com  
• Ultra Low R  
DS(on)  
• Higher Efficiency Extending Battery Life  
• Logic Level Gate Drive  
−10 AMPERES  
−20 VOLTS  
14 mW @ VGS = −4.5 V  
• Miniature SOIC−8 Surface Mount Package  
• Diode Exhibits High Speed, Soft Recovery  
• Avalanche Energy Specified  
P−Channel  
D
• SOIC−8 Mounting Information Provided  
• Pb−Free Package is Available  
Applications  
G
• Power Management in Portable and Battery−Powered Products,  
i.e.: Cellular and Cordless Telephones and PCMCIA Cards  
S
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
−20  
Unit  
Vdc  
Vdc  
MARKING DIAGRAM &  
PIN ASSIGNMENT  
Drain−to−Source Voltage  
V
DSS  
Gate−to−Source Voltage − Continuous  
V
GS  
"12  
D
D
D
D
8
8
Thermal Resistance −  
Junction−to−Ambient (Note 1)  
R
50  
2.5  
−10  
−8.0  
0.6  
−5.5  
−50  
°C/W  
W
A
1
q
P
D
D
D
D
D
JA  
E10P02  
AYWW G  
G
Total Power Dissipation @ T = 25°C  
A
SOIC−8  
CASE 751  
STYLE 12  
Continuous Drain Current @ 25°C  
Continuous Drain Current @ 70°C  
Maximum Operating Power Dissipation  
Maximum Operating Drain Current  
Pulsed Drain Current (Note 3)  
I
I
P
A
W
A
1
I
S
S
S
G
I
A
DM  
Thermal Resistance −  
E10P02 = Specific Device Code  
Junction−to−Ambient (Note 2)  
R
80  
°C/W  
W
A
q
JA  
A
Y
= Assembly Location  
= Year  
Total Power Dissipation @ T = 25°C  
P
D
1.6  
A
Continuous Drain Current @ 25°C  
Continuous Drain Current @ 70°C  
Maximum Operating Power Dissipation  
Maximum Operating Drain Current  
Pulsed Drain Current (Note 3)  
I
I
P
−8.8  
−6.4  
0.4  
−4.5  
−44  
D
D
D
D
WW  
G
= Work Week  
= Pb−Free Package  
A
W
A
A
I
(Note: Microdot may be in either location)  
I
DM  
Operating and Storage Temperature Range  
T , T  
−55 to  
+150  
°C  
J
stg  
ORDERING INFORMATION  
†
Single Pulse Drain−to−Source Avalanche En-  
E
500  
mJ  
Device  
Package  
Shipping  
AS  
ergy − Starting T = 25°C  
J
(V = −20 Vdc, V = −4.5 Vdc,  
NTMS10P02R2  
NTMS10P02R2G  
SOIC−8  
2500/Tape & Reel  
2500/Tape & Reel  
DD  
GS  
Peak I = 5.0 Apk, L = 40 mH, R = 25 W)  
L
G
SOIC−8  
(Pb−Free)  
Maximum Lead Temperature for Soldering  
Purposes, 1/8″ from case for 10 seconds  
T
260  
°C  
L
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Mounted onto a 2″ square FR−4 Board  
(1 in sq, Cu 0.06″ thick single sided), t = 10 seconds.  
2. Mounted onto a 2″ square FR−4 Board  
(1 in sq, Cu 0.06″ thick single sided), t = steady state.  
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2%.  
© Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
March, 2006 − Rev. 3  
NTMS10P02R2/D  
123456

中文翻译

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NTMS10P02R2 替代型号

型号 品牌 替代类型 描述 数据表
NTMS10P02R2G ONSEMI

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 Power MOSFET −10 Amps, −20 Volts P−Channel Enhancement−Mode

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