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NTMS10P02R2/D

更新时间： 2024-09-15 23:55:07
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页数 文件大小 规格书
8页 108K
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HDTMOS3e Single SO-8

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NTMS10P02R2/D 数据手册

 浏览型号NTMS10P02R2/D的Datasheet PDF文件第2页浏览型号NTMS10P02R2/D的Datasheet PDF文件第3页浏览型号NTMS10P02R2/D的Datasheet PDF文件第4页浏览型号NTMS10P02R2/D的Datasheet PDF文件第5页浏览型号NTMS10P02R2/D的Datasheet PDF文件第6页浏览型号NTMS10P02R2/D的Datasheet PDF文件第7页 
NTMS10P02R2  
Product Preview  
HDTMOS3e Single SO-8  
P–Channel Enhancement–Mode  
Power MOSFET  
Features  
• Ultra Low R  
• Higher Efficiency Extending Battery Life  
• Logic Level Gate Drive  
http://onsemi.com  
DS(on)  
P–Channel  
D
• Miniature SO–8 Surface Mount Package  
• Diode Exhibits High Speed, Soft Recovery  
• Avalanche Energy Specified  
• SO–8 Mounting Information Provided  
G
Applications  
• Power Management in Portable and Battery–Powered Products, i.e.:  
S
Cellular and Cordless Telephones and PCMCIA Cards  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Symbol  
Value  
Unit  
8
Drain–to–Source Voltage  
V
DSS  
–20  
Vdc  
Vdc  
Gate–to–Source Voltage — Continuous  
V
GS  
"12  
1
Thermal Resistance —  
Junction–to–Ambient  
Total Power Dissipation @ T = 25°C  
Continuous Drain Current @ 25°C  
Continuous Drain Current @ 70°C  
Maximum Operating Power Dissipation  
Maximum Operating Drain Current  
Pulsed Drain Current  
SO–8  
CASE 751  
STYLE 12  
(1.)  
R
P
I
I
P
50  
2.5  
–10  
–8.0  
0.6  
°C/W  
W
A
A
W
A
θ
JA  
(1.)  
A
D
(1.)  
D
(1.)  
D
(2.)  
D
MARKING DIAGRAM  
(2.)  
I
–5.5  
–50  
D
(5.)  
I
A
DM  
Thermal Resistance —  
Junction–to–Ambient  
Total Power Dissipation @ T = 25°C  
Continuous Drain Current @ 25°C  
Continuous Drain Current @ 70°C  
Maximum Operating Power Dissipation  
Maximum Operating Drain Current  
Pulsed Drain Current  
E10P02  
LYWW  
(4.)  
R
P
I
I
P
80  
1.6  
°C/W  
W
A
A
W
A
θ
JA  
(3.)  
A
D
(3.)  
–8.8  
–6.4  
0.4  
–4.5  
–44  
D
(3.)  
(4.)  
(4.)  
D
E10P02= Device Code  
D
L
Y
WW  
= Assembly Location  
= Year  
= Work Week  
I
D
(5.)  
I
A
DM  
Operating and Storage  
Temperature Range  
T , T  
J
–55 to  
+150  
°C  
stg  
Single Pulse Drain–to–Source Avalanche  
Energy — Starting T = 25°C  
E
AS  
500  
mJ  
PIN ASSIGNMENT  
J
(V = –20 Vdc, V = –4.5 Vdc,  
DD  
GS  
Source  
Source  
Source  
Gate  
1
Drain  
Drain  
Drain  
Drain  
8
7
6
5
Peak I = 5.0 Apk, L = 40 mH,  
L
2
3
4
R
= 25 Ω)  
G
Maximum Lead Temperature for Soldering  
Purposes, 1/8″ from case for 10 seconds  
T
L
260  
°C  
1. Mounted onto a 2″ square FR–4 Board (1″ sq. Cu 0.06″ thick single sided),  
t = 10 seconds.  
Top View  
2. Mounted onto a 2″ square FR–4 Board (1″ sq. Cu 0.06″ thick single sided),  
t = steady state.  
3. Minimum FR–4 or G–10 PCB, t = 10 seconds.  
4. Minimum FR–4 or G–10 PCB, t = steady state.  
5. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2%.  
ORDERING INFORMATION  
Device  
NTMS10P02R2  
Package  
Shipping  
2500/Tape & Reel  
SO–8  
This document contains information on a product under development. ON Semiconductor  
reserves the right to change or discontinue this product without notice.  
Semiconductor Components Industries, LLC, 2000  
1
Publication Order Number:  
August, 2000 – Rev. 1  
NTMS10P02R2/D  
12345678

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