是否无铅: | 不含铅 | 生命周期: | Obsolete |
零件包装代码: | SOT | 包装说明: | SMALL OUTLINE, R-PDSO-G8 |
针数: | 8 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | Factory Lead Time: | 1 week |
风险等级: | 5.29 | 其他特性: | AVALANCHE RATED |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (Abs) (ID): | 3.86 A | 最大漏极电流 (ID): | 2.34 A |
最大漏源导通电阻: | 0.085 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
最大反馈电容 (Crss): | 135 pF | JESD-30 代码: | R-PDSO-G8 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 8 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | P-CHANNEL | 最大功率耗散 (Abs): | 0.73 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子面层: | Tin (Sn) |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 40 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
NTMS3P03R2 | ONSEMI |
完全替代 |
Power MOSFET -3.05 Amps, -30 Volts |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NTMS4101PR2 | ONSEMI |
获取价格 |
6.9A, 20V, 0.019ohm, P-CHANNEL, Si, POWER, MOSFET, CASE 751-07, SOIC-8 | |
NTMS4107N | ONSEMI |
获取价格 |
Power MOSFET 30 V, 18 A, Single N−Channel, SO−8 | |
NTMS4107NR2 | ONSEMI |
获取价格 |
Power MOSFET 30 V, 18 A, Single N−Channel, SO−8 | |
NTMS4107NR2G | ONSEMI |
获取价格 |
Power MOSFET 30V 18A 3.4 mOhm Single N-Channel SO-8 | |
NTMS4117NR2 | ONSEMI |
获取价格 |
TRANSISTOR 13300 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, CASE 751-07, SO-8, FET Gen | |
NTMS4117NR2G | ONSEMI |
获取价格 |
13300mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, CASE 751-07, SO-8 | |
NTMS4118NR2 | ONSEMI |
获取价格 |
9000mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, CASE 751-07, SOP-8 | |
NTMS4118NR2G | ONSEMI |
获取价格 |
TRANSISTOR 9000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, CASE 751-07, SOP | |
NTMS4176P | ONSEMI |
获取价格 |
Power MOSFET -30 V, -9.6 A, P-Channel, SOIC-8 | |
NTMS4176PR2G | ONSEMI |
获取价格 |
Power MOSFET -30 V, -9.6 A, P-Channel, SOIC-8 |