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NTMKB4893NT1G PDF预览

NTMKB4893NT1G

更新时间： 2024-11-06 19:41:11
品牌 Logo 应用领域
安森美 - ONSEMI 开关脉冲晶体管
页数 文件大小 规格书
5页 120K
描述
15.8A, 25V, 0.0054ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 145AD-01, ICEPAK-2

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NTMKB4893NT1G 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：LEAD FREE, CASE 145AD-01, ICEPAK-2针数：2
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：5.84雪崩能效等级（Eas）：79.4 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：25 V最大漏极电流 (ID)：15.8 A
最大漏源导通电阻：0.0054 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-XBCC-N2元件数量：1
端子数量：2工作模式：ENHANCEMENT MODE
封装主体材料：UNSPECIFIED封装形状：RECTANGULAR
封装形式：CHIP CARRIER峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大脉冲漏极电流 (IDM)：124 A
认证状态：Not Qualified表面贴装：YES
端子形式：NO LEAD端子位置：BOTTOM
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

NTMKB4893NT1G 数据手册

 浏览型号NTMKB4893NT1G的Datasheet PDF文件第2页浏览型号NTMKB4893NT1G的Datasheet PDF文件第3页浏览型号NTMKB4893NT1G的Datasheet PDF文件第4页浏览型号NTMKB4893NT1G的Datasheet PDF文件第5页 
NTMKB4893N  
Power MOSFET  
25 V, 87 A, Single N−Channel, ICEPAK  
Features  
• Low Package Inductance  
• Low R  
to Minimize Conduction Losses  
DS(on)  
http://onsemi.com  
• Low Capacitance to Minimize Driver Losses  
• Optimized Gate Charge to Minimize Switching Losses  
• Dual Sided Cooling Capability  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
• Compatible with SQ Footprint and Outline  
• This is a Pb−Free Device  
Applications  
5.4 mW @ 10 V  
8.6 mW @ 4.5 V  
25 V  
87 A  
• CPU Power Delivery  
• DC−DC Converters  
MARKING  
DIAGRAM  
• Optimized for both Synch FET and Control FET  
MAXIMUM RATINGS (T = 25°C unless otherwise stated)  
J
ICEPAK  
B1 PAD  
CASE 145AD  
B4893  
AYWWG  
G
Parameter  
Drain−to−Source Voltage  
Symbol Value Unit  
V
DSS  
25  
20  
V
V
A
Gate−to−Source Voltage  
V
GS  
Continuous Drain  
I
D
T = 25°C  
15.8  
12.6  
2.2  
A
B4893= Specific Device Code  
Current R  
(Note 1)  
q
JA  
A
Y
= Assembly Location  
= Year  
T = 70°C  
A
Power Dissipation R  
(Note 1)  
T = 25°C  
A
P
D
W
A
q
JA  
WW = Work Week  
G
= Pb−Free Package  
Continuous Drain  
Current R  
I
D
T = 25°C  
87  
48  
65  
A
(Note: Microdot may be in either location)  
D
q
J−PCB  
T = 70°C  
A
Steady  
State  
(Note 2)  
Power Dissipation  
T = 25°C  
A
P
I
W
A
D
R
(Note 2)  
q
J−PCB  
Continuous Drain  
Current R (Note 1)  
T
C
T
C
T
C
= 25°C  
= 70°C  
= 25°C  
64  
51  
36  
D
q
JC  
Power Dissipation  
(Note 1)  
P
D
W
G
R
q
JC  
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
124  
50  
A
A
A
p
S
Current Limited by Package  
T = 25°C  
A
I
Dmax  
N−CHANNEL MOSFET  
Operating Junction and Storage Temperature  
T ,  
stg  
−55 to  
150  
°C  
J
T
Source Current (Body Diode) (Note 1)  
Drain to Source DV/DT  
I
42  
6.0  
A
S
ORDERING INFORMATION  
dV/dt  
V/ns  
mJ  
†
Device  
Package  
Shipping  
Single Pulse Drain−to−Source Avalanche Energy  
E
AS  
79.4  
NTMKB4893NT1G ICEPAK 1500/Tape & Reel  
(T = 25°C, V = 25 V, V = 10 V,  
J
DD  
GS  
I = 23 A , L = 0.3 mH, R = 25 W)  
(Pb−Free)  
L
pk  
G
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
L
270  
°C  
NTMKB4893NT3G ICEPAK 5000/Tape & Reel  
(Pb−Free)  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
1. Surface mounted on FR4 board using 1 sq−in pad, 1 oz Cu.  
2. Measured with a T of approximately 90°C using 1 oz Cu board.  
J
3. Surface mounted on FR4 board using 1 sq−in pad, 2 oz Cu.  
© Semiconductor Components Industries, LLC, 2011  
1
Publication Order Number:  
January, 2011 − Rev. 2  
NTMKB4893N/D  
 
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