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NTMJS1D5N04CLTWG

更新时间： 2024-11-07 11:14:23
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 352K
描述
功率 MOSFET，40 V，1.55mΩ，185 A，单 N 沟道

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NTMJS1D5N04CLTWG 数据手册

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NTMJS1D5N04CL  
Power MOSFET  
Single N−Channel, 40 V, 1.4 mW, 200 A  
Features  
• Small Footprint (5x6 mm) for Compact Design  
• Low R  
to Minimize Conduction Losses  
• Low Q and Capacitance to Minimize Driver Losses  
DS(on)  
www.onsemi.com  
G
• LFPAK8 Package, Industry Standard  
• These Devices are Pb−Free and are RoHS Compliant  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
1.4 mW @ 10 V  
2.2 mW @ 4.5 V  
40 V  
200 A  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
40  
Unit  
V
V
DSS  
D (5)  
Gate−to−Source Voltage  
V
GS  
20  
V
Continuous Drain  
Current R  
Steady  
State  
T
= 25°C  
I
D
200  
A
C
q
JC  
T
C
= 100°C  
140  
(Notes 1, 3)  
Power Dissipation  
T
= 25°C  
P
110  
53  
W
A
C
D
G (4)  
R
(Note 1)  
q
JC  
T
C
= 100°C  
Continuous Drain  
Current R  
Steady  
State  
T = 25°C  
A
I
D
38  
S (1,2,3)  
N−CHANNEL MOSFET  
q
JA  
T = 100°C  
A
27  
(Notes 1, 2, 3)  
Power Dissipation  
T = 25°C  
P
3.8  
1.9  
900  
W
A
D
R
(Notes 1 & 2)  
q
JA  
T = 100°C  
A
MARKING  
DIAGRAM  
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
A
A
p
Operating Junction and Storage Temperature  
T , T  
−55 to  
+ 175  
°C  
J
stg  
1D5N04  
CL  
AWLYW  
Source Current (Body Diode)  
I
120  
493  
A
S
Single Pulse Drain−to−Source Avalanche  
E
AS  
mJ  
LFPAK8  
CASE 760AA  
Energy (I  
= 15 A)  
L(pk)  
Single Pulse Drain−to−Source Voltage  
p
V
DSM  
48  
V
(t = 10 ms)  
1D5N04CL = Specific Device Code  
Lead Temperature for Soldering Purposes  
T
260  
°C  
L
A
WL  
Y
= Assembly Location  
= Wafer Lot  
= Year  
(1/8″ from case for 10 s)  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
W
= Work Week  
THERMAL RESISTANCE MAXIMUM RATINGS  
Parameter  
Symbol  
Value  
Unit  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information on  
page 5 of this data sheet.  
Junction−to−Case − Steady State  
R
1.4  
36  
°C/W  
q
JC  
Junction−to−Ambient − Steady State (Note 2)  
R
q
JA  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
3. Maximum current for pulses as long as 1 second is higher but is dependent  
on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2017  
1
Publication Order Number:  
March, 2019 − Rev. 0  
NTMJS1D5N04CL/D  
 
1234567

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