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NTMFSC2D9N08H

更新时间： 2024-09-17 11:14:43
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 390K
描述
MOSFET - Power, Single, N-Channel, DUAL COOLTM, DFN8 5x6. 15, 80V, 2.9m, 154A

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NTMFSC2D9N08H 数据手册

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DATA SHEET  
www.onsemi.com  
MOSFET - Power, Single  
N-Channel, DUAL COOL),  
DFN8 5x6.15  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
80 V  
2.9 mW @ 10 V  
154 A  
N−Channel MOSFET  
80 V, 2.9 mW, 154 A  
S
S
S
1
8
D
D
D
NTMFSC2D9N08H  
2
3
7
6
Features  
• Advanced Dual−Side Cooled Packaging  
• Ultra Low R  
to Minimize Conduction Losses  
• MSL1 Robust Packaging Design  
DS(on)  
G
4
5
D
• Low Qg and Qoss to Minimize Charge Losses  
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
Typical Applications  
• DC−DC Conversion  
• Orring FET/Load Switching  
• Synchronous Rectification  
DFN8 5x6.15  
CASE 506EG  
MAXIMUM RATINGS (T = 25°C, Unless otherwise specified)  
J
Parameter  
Drain−to−Source Breakdown Voltage  
Gate−to−Source Voltage  
Symbol  
Value  
80  
Unit  
V
MARKING DIAGRAM  
V
(BR)DSS  
V
GS  
20  
V
3PAYWZ  
Continuous Drain  
Current R  
I
154  
A
D
q
JC  
Steady  
State  
(Note 2)  
T
= 25°C  
C
Power Dissipation  
P
166  
23  
W
A
D
R
(Note 2)  
q
JC  
Continuous Drain  
Current R  
I
D
3P  
A
Y
= Specific Device Code  
= Assembly Location  
= Year  
q
JA  
Steady  
State  
(Note 1, 2)  
T = 25°C  
A
W
Z
= Work Week  
= Assembly Lot Code  
Power Dissipation  
P
3.8  
W
D
R
(Note 1, 2)  
q
JA  
Pulsed Drain Current T = 25°C, t = 100 ms  
I
DM  
638  
A
A
p
Operating Junction and Storage Temperature  
Range  
T , T  
−55 to  
°C  
J
stg  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 5 of  
this data sheet.  
+175  
Source Current (Body Diode)  
I
S
138  
173  
A
Single Pulse Drain−to−Source Avalanche  
E
AS  
mJ  
Energy (I = 34 A)  
AV  
Lead Temperature Soldering Reflow for Sol-  
dering Purposes (1/8″ from case for 10 s)  
T
L
260  
°C  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
2
1. Surface−mounted on FR4 board using 1 in pad size, 1 oz Cu pad.  
2. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
© Semiconductor Components Industries, LLC, 2020  
1
Publication Order Number:  
January, 2023 − Rev. 2  
NTMFSC2D9N08H/D  
 
1234567

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