Datasheet > NTMFSS1D5N06CL

NTMFSS1D5N06CL

更新时间： 2024-11-10 11:15:27

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	365K
描述
MOSFET, Power, Single, N-Channel, Source-Down, TDFN9, 60V, 1.5mΩ, 235A

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NTMFSS1D5N06CL 数据手册

DATA SHEET

www.onsemi.com

MOSFET - Power, Single

N-Channel, Source-Down

TDFN9

MAX

I MAX

(BR)DSS

DS(ON)

1.5 mW @ 10 V

2.3 mW @ 4.5 V

60 V

235 A

60 V, 1.5 mW, 235 A

D (5, 6, 7, 8)

NTMFSS1D5N06CL

Features

G (9)

• Small Footprint (5x6 mm) for Compact Design

• Low R

to Minimize Conduction Losses

DS(on)

S (1, 2, 3, 4)

N−CHANNEL MOSFET

• Low Q and Capacitance to Minimize Driver Losses

• These Devices are Pb−Free, Halogen−Free / BFR Free and are RoHS

Compliant

Typical Applications

MARKING

DIAGRAM

• DC−DC Converters

• Power Load Switch

• Notebook Battery Management

1D5N06

AYWZZ

TDFN9 5x6

CASE 520AE

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

1D5N06 = Specific Device Code

DSS

= Assembly Location

= Year

Gate−to−Source Voltage

= Work Week

= Wafer Lot

Continuous Drain

Current R

= 25°C

= 100°C

= 25°C

237

149

144

Steady

State

Power Dissipation

Steady

State

ORDERING INFORMATION

= 100°C

†

Device

NTMFSS1D5N06CL

Package

Shipping

Continuous Drain Cur-

T = 25°C

Steady

State

TDFN9

(Pb−Free)

3000 / Tape &

Reel

rent R

(Notes 1, 2)

T = 100°C

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Power Dissipation

(Notes 1, 2)

T = 25°C

2.5

Steady

State

T = 100°C

Pulsed Drain Current

T = 25°C, t = 10 ms

1698

Operating Junction and Storage Temperature

Range

T , T

−55 to

+150

°C

stg

Single Pulse Drain−to−Source Avalanche

207

Energy (I

= 75 A)

L(pk)

Lead Temperature Soldering Reflow for Solder-

ing Purposes (1/8″ from case for 10 s)

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

0.86

Unit

Junction−to−Case − Steady State

Junction−to−Ambient − Steady State (Note 2)

°C/W

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 1 in pad size, 2 oz. Cu pad.

Publication Order Number:

January, 2023 − Rev. 3

NTMFSS1D5N06CL/D

12 3 4 5 6 7

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与NTMFSS1D5N06CL相关器件

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NTMJS0D9N04CLTWG	ONSEMI	获取价格	功率 MOSFET，40 V，0.82Ω，330 A，单 N 沟道
NTMJS0D9N04CTWG	ONSEMI	获取价格	Power MOSFET 40 V, 0.81Ω, 342 A, Single N-Cha
NTMJS1D0N04CTWG	ONSEMI	获取价格	功率 MOSFET，40 V，0.92Ω，300 A，单 N 沟道
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NTMJS1D2N04CLTWG	ONSEMI	获取价格	功率 MOSFET，40 V，1.2 mΩ，237 A，单 N 沟道

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