Datasheet > NTMJS0D8N04CLTWG

NTMJS0D8N04CLTWG

更新时间： 2024-09-17 11:14:55

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	369K
描述
Power MOSFET 40 V, 0.83Ω, 336 A, Single N-Channel

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NTMJS0D8N04CLTWG 数据手册

MOSFET – Power, Single

N-Channel

40 V, 0.72 mW, 368 A

NTMJS0D8N04CL

Features

www.onsemi.com

• Small Footprint (5x6 mm) for Compact Design

• Low R

to Minimize Conduction Losses

DS(on)

• Low Q and Capacitance to Minimize Driver Losses

MAX

I MAX

(BR)DSS

DS(ON)

• LFPAK8 Package, Industry Standard

0.72 mW @ 10 V

1.15 mW @ 4.5 V

• These Devices are Pb−Free and are RoHS Compliant

40 V

368 A

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

DSS

D (5−8)

Gate−to−Source Voltage

Continuous Drain

Current R

Steady

State

= 25°C

= 100°C

= 25°C

368

260

180

(Notes 1, 3)

G (4)

Power Dissipation

(Note 1)

= 100°C

S (1,2,3)

N−CHANNEL MOSFET

Continuous Drain

Current R

Steady

State

T = 25°C

T = 100°C

(Notes 1, 2, 3)

Power Dissipation

T = 25°C

4.2

2.1

900

MARKING

DIAGRAM

(Notes 1, 2)

T = 100°C

Pulsed Drain Current

T = 25°C, t = 10 ms

Operating Junction and Storage Temperature

Range

T , T

−55 to

+175

°C

stg

0D8N04

LFPAK8

CASE 760AA

ALLYW

Source Current (Body Diode)

150

Single Pulse Drain−to−Source Avalanche

1286

Energy (I

= 32.8 A)

L(pk)

S G

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

0D8N04CL = Specific Device Code

= Assembly Location

= Wafer Lot

= Year

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

= Work Week

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

0.83

Unit

ORDERING INFORMATION

See detailed ordering, marking and shipping information on

page 5 of this data sheet.

Junction−to−Case − Steady State

Junction−to−Ambient − Steady State (Note 2)

°C/W

35.9

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.

3. Maximum current for pulses as long as 1 second is higher but is dependent

on pulse duration and duty cycle.

Publication Order Number:

November, 2019 − Rev. 0

NTMJS0D8N04CL/D

12 3 4 5 6 7

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与NTMJS0D8N04CLTWG相关器件

型号	品牌	获取价格	描述	数据表
NTMJS0D9N03CGTWG	ONSEMI	获取价格	MOSFET 30V N Channel LFPAK
NTMJS0D9N04CLTWG	ONSEMI	获取价格	功率 MOSFET，40 V，0.82Ω，330 A，单 N 沟道
NTMJS0D9N04CTWG	ONSEMI	获取价格	Power MOSFET 40 V, 0.81Ω, 342 A, Single N-Cha
NTMJS1D0N04CTWG	ONSEMI	获取价格	功率 MOSFET，40 V，0.92Ω，300 A，单 N 沟道
NTMJS1D15N03CGTWG	ONSEMI	获取价格	MOSFET, Power N Channel 30V LFPAK
NTMJS1D2N04CLTWG	ONSEMI	获取价格	功率 MOSFET，40 V，1.2 mΩ，237 A，单 N 沟道
NTMJS1D3N04CTWG	ONSEMI	获取价格	Power MOSFET, Single N-Channel, 40 V, 1.3 mOhm, 235 A
NTMJS1D4N06CLTWG	ONSEMI	获取价格	Power MOSFET 60 V, 1.3Ω, 262 A, Single N-Cha
NTMJS1D5N04CLTWG	ONSEMI	获取价格	功率 MOSFET，40 V，1.55mΩ，185 A，单 N 沟道
NTMJS2D5N06CLTWG	ONSEMI	获取价格	功率 MOSFET，60 V，2.5 mΩ，150 A，单 N 沟道

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