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NTMJS1D2N04CLTWG

更新时间： 2024-09-17 11:15:23
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 352K
描述
功率 MOSFET，40 V，1.2 mΩ，237 A，单 N 沟道

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NTMJS1D2N04CLTWG 数据手册

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NTMJS1D2N04CL  
Power MOSFET  
40 V, 1.2 mW, 237 A, Single N−Channel  
Features  
• Small Footprint (5x6 mm) for Compact Design  
• Low R  
to Minimize Conduction Losses  
• Low Q and Capacitance to Minimize Driver Losses  
DS(on)  
www.onsemi.com  
G
• LFPAK8 Package, Industry Standard  
• These Devices are Pb−Free and are RoHS Compliant  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
1.2 mW @ 10 V  
1.8 mW @ 4.5 V  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
40 V  
237 A  
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
40  
Unit  
V
V
DSS  
D (5,8)  
Gate−to−Source Voltage  
V
GS  
20  
V
Continuous Drain  
Current R  
T
= 25°C  
= 100°C  
= 25°C  
I
237  
168  
128  
64  
A
C
D
q
JC  
T
C
(Notes 1, 3)  
Steady  
State  
Power Dissipation  
T
C
P
W
A
G (4)  
D
R
(Note 1)  
q
JC  
T
C
= 100°C  
S (1,2,3)  
N−CHANNEL MOSFET  
Continuous Drain  
Current R  
T = 25°C  
A
I
D
41  
q
JA  
T = 100°C  
A
29  
(Notes 1, 2, 3)  
Steady  
State  
Power Dissipation  
T = 25°C  
A
P
3.8  
1.9  
1480  
W
D
R
(Notes 1, 2)  
q
JA  
MARKING  
DIAGRAM  
T = 100°C  
A
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
A
A
p
D
D
D
D
Operating Junction and Storage Temperature  
Range  
T , T  
−55 to  
+ 175  
°C  
J
stg  
1D2N04  
CL  
AWLYW  
Source Current (Body Diode)  
I
107  
453  
A
S
LFPAK8  
CASE 760AA  
Single Pulse Drain−to−Source Avalanche  
E
AS  
mJ  
Energy (I  
= 19 A)  
L(pk)  
1
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
L
260  
°C  
S
S
S
G
1D2N04CL = Specific Device Code  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
A
WL  
Y
= Assembly Location  
= Wafer Lot  
= Year  
THERMAL RESISTANCE MAXIMUM RATINGS  
W
= Work Week  
Parameter  
Symbol  
Value  
1.2  
Unit  
Junction−to−Case − Steady State  
Junction−to−Ambient − Steady State (Note 2)  
R
°C/W  
q
JC  
ORDERING INFORMATION  
R
36  
q
JA  
See detailed ordering, marking and shipping information on  
page 5 of this data sheet.  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
3. Maximum current for pulses as long as 1 second is higher but is dependent  
on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2018  
1
Publication Order Number:  
December, 2018 − Rev. 0  
NTMJS1D2N04CL/D  
 
1234567

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