Datasheet > NTMJS1D0N04CTWG

NTMJS1D0N04CTWG

更新时间： 2024-11-07 11:11:59

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	357K
描述
功率 MOSFET，40 V，0.92Ω，300 A，单 N 沟道

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NTMJS1D0N04CTWG 数据手册

NTMJS1D0N04C

MOSFET – Power, Single,

N-Channel

40 V, 0.92 mW, 300 A

Features

www.onsemi.com

• Small Footprint (5x6 mm) for Compact Design

• Low R

to Minimize Conduction Losses

DS(on)

• Low Q and Capacitance to Minimize Driver Losses

• LFPAK−E Package, Industry Standard

MAX

I MAX

(BR)DSS

DS(ON)

• These Devices are Pb−Free and are RoHS Compliant

40 V

0.92 mW @ 10 V

300 A

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

D (5−8)

DSS

Gate−to−Source Voltage

Continuous Drain

Current R

= 25°C

= 100°C

= 25°C

300

212

166

G (4)

(Notes 1, 3)

Steady

State

Power Dissipation

(Note 1)

S (1,2,3)

N−CHANNEL MOSFET

= 100°C

Continuous Drain

Current R

T = 25°C

T = 100°C

(Notes 1, 2, 3)

Steady

State

MARKING

DIAGRAM

Power Dissipation

T = 25°C

3.9

1.9

900

(Notes 1, 2)

T = 100°C

Pulsed Drain Current

T = 25°C, t = 10 ms

1D0N04

AWLYW

Operating Junction and Storage Temperature

Range

T , T

−55 to

°C

stg

+ 175

LFPAK8

CASE 760AA

Source Current (Body Diode)

158

578

Single Pulse Drain−to−Source Avalanche

Energy (I

= 34 A)

L(pk)

Lead Temperature for Soldering Purposes

260

°C

1D0N04C = Specific Device Code

(1/8″ from case for 10 s)

= Assembly Location

= Wafer Lot

= Year

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

= Work Week

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

0.9

Unit

ORDERING INFORMATION

See detailed ordering, marking and shipping information on

page 5 of this data sheet.

Junction−to−Case − Steady State

Junction−to−Ambient − Steady State (Note 2)

°C/W

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.

3. Maximum current for pulses as long as 1 second is higher but is dependent

on pulse duration and duty cycle.

Publication Order Number:

June, 2019 − Rev. 0

NTMJS1D0N04C/D

12 3 4 5 6 7

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与NTMJS1D0N04CTWG相关器件

型号	品牌	获取价格	描述	数据表
NTMJS1D15N03CGTWG	ONSEMI	获取价格	MOSFET, Power N Channel 30V LFPAK
NTMJS1D2N04CLTWG	ONSEMI	获取价格	功率 MOSFET，40 V，1.2 mΩ，237 A，单 N 沟道
NTMJS1D3N04CTWG	ONSEMI	获取价格	Power MOSFET, Single N-Channel, 40 V, 1.3 mOhm, 235 A
NTMJS1D4N06CLTWG	ONSEMI	获取价格	Power MOSFET 60 V, 1.3Ω, 262 A, Single N-Cha
NTMJS1D5N04CLTWG	ONSEMI	获取价格	功率 MOSFET，40 V，1.55mΩ，185 A，单 N 沟道
NTMJS2D5N06CLTWG	ONSEMI	获取价格	功率 MOSFET，60 V，2.5 mΩ，150 A，单 N 沟道
NTMKB4893NT1G	ONSEMI	获取价格	15.8A, 25V, 0.0054ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 145AD-01, ICEPAK-2
NTMKB4893NT3G	ONSEMI	获取价格	TRANSISTOR 15.8 A, 25 V, 0.0054 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 145AD-0
NTMKB4895NT1G	ONSEMI	获取价格	15A, 30V, 0.006ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 145AD-01, ICEPAK-2
NTMKB4896NT1G	ONSEMI	获取价格	13A, 30V, 0.012ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 145AC-01, ICEPAK-2

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