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NTMFSC4D2N10MC

更新时间： 2024-09-17 11:13:43
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 369K
描述
N-Channel Dual CoolTM 56 PowerTrench® MOSFET 100V, ___A, 4.2mΩ

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NTMFSC4D2N10MC 数据手册

 浏览型号NTMFSC4D2N10MC的Datasheet PDF文件第2页浏览型号NTMFSC4D2N10MC的Datasheet PDF文件第3页浏览型号NTMFSC4D2N10MC的Datasheet PDF文件第4页浏览型号NTMFSC4D2N10MC的Datasheet PDF文件第5页浏览型号NTMFSC4D2N10MC的Datasheet PDF文件第6页浏览型号NTMFSC4D2N10MC的Datasheet PDF文件第7页 
DATA SHEET  
www.onsemi.com  
MOSFET - Power, Single  
N-Channel, DUAL COOL),  
DFN8 5x6.15  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
4.3 mW @ 10 V  
12 mW @ 6 V  
100 V  
116 A  
100 V, 4.3 mW, 116 A  
N−Channel MOSFET  
NTMFSC4D2N10MC  
S
S
S
1
8
D
D
D
Features  
• Advanced Dual−Sided Cooled Packaging  
2
3
7
6
• Ultra Low R  
to Minimize Conduction Losses  
• MSL1 Robust Packaging Design  
DS(on)  
• 175°C T Capable  
J
G
4
5
D
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
Typical Applications  
• Orring FET/Load Switching  
• Synchronous Rectifier  
• DC−DC Conversion  
MAXIMUM RATINGS (T = 25°C, Unless otherwise specified)  
J
DFN8 5x6.15  
CASE 506EG  
Parameter  
Drain−to−Source Breakdown Voltage  
Gate−to−Source Voltage  
Symbol  
Value  
100  
20  
Unit  
V
V
(BR)DSS  
V
GS  
V
MARKING DIAGRAM  
Continuous Drain  
Current R  
I
116  
A
D
q
JC  
Steady  
State  
(Note 2)  
3QAYWZ  
T
= 25°C  
C
Power Dissipation  
P
122  
W
A
D
R
(Note 2)  
q
JC  
Continuous Drain  
Current R  
I
D
29.6  
q
JA  
Steady  
State  
(Notes 1, 2)  
T = 25°C  
A
Power Dissipation  
P
7.9  
W
D
3Q  
A
= Specific Device Code  
= Plant Code  
R
(Notes 1, 2)  
q
JA  
YW = Date Code  
= Lot Code  
Pulsed Drain Current T = 25°C, t = 10 ms  
I
DM  
900  
A
A
p
Z
Operating Junction and Storage Temperature  
Range  
T , T  
−55 to  
+175  
°C  
J
stg  
Source Current (Body Diode)  
I
101  
120  
A
S
ORDERING INFORMATION  
See detailed ordering and shipping information on page 5 of  
this data sheet.  
Single Pulse Drain−to−Source Avalanche  
E
AS  
mJ  
Energy (I = 49 A, L = 0.1 mH)  
AV  
Lead Temperature Soldering Reflow for Sol-  
dering Purposes (1/8″ from case for 10 s)  
T
L
300  
°C  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
2
1. Surface−mounted on FR4 board using 1 in pad size, 1 oz Cu pad.  
2. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
© Semiconductor Components Industries, LLC, 2013  
1
Publication Order Number:  
April, 2023 − Rev. 5  
NTMFSC4D2N10MC/D  
 
1234567

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