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NTMFSS1D1N06CLT3G PDF预览

NTMFSS1D1N06CLT3G

更新时间： 2024-11-06 20:51:43
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
4页 103K
描述
Power Field-Effect Transistor

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中文翻译

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NTMFSS1D1N06CLT3G 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：,Reach Compliance Code：compliant
风险等级：5.72峰值回流温度（摄氏度）：NOT SPECIFIED
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

NTMFSS1D1N06CLT3G 数据手册

 浏览型号NTMFSS1D1N06CLT3G的Datasheet PDF文件第2页浏览型号NTMFSS1D1N06CLT3G的Datasheet PDF文件第3页浏览型号NTMFSS1D1N06CLT3G的Datasheet PDF文件第4页 
NTMFSS1D1N06CL  
Product Preview  
Power MOSFET  
60 V, 1.2 mW, 287 A, Single N−Channel,  
Source−Down SO8−FL  
Features  
www.onsemi.com  
• Small Footprint (5x6 mm) for Compact Design  
• Low R  
to Minimize Conduction Losses  
DS(on)  
• Low Q and Capacitance to Minimize Driver Losses  
G
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
• These Devices are Pb−Free, Halogen−Free / BFR Free and are RoHS  
1.2 mW @ 10 V  
1.7 mW @ 4.5 V  
Compliant  
60 V  
287 A  
Typical Applications  
• DC−DC Converters  
• Power Load Switch  
• Notebook Battery Management  
• Synchronous Rectifier  
D (2,3,4)  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
G (1)  
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
60  
Unit  
V
V
DSS  
S (5)  
Gate−to−Source Voltage  
V
GS  
20  
V
N−CHANNEL MOSFET  
Continuous Drain  
T
T
= 25°C  
= 25°C  
I
287  
A
C
D
Current R  
(Note 2)  
q
JC  
Steady  
State  
Power Dissipation  
(Note 2)  
P
200  
40  
W
A
C
D
MARKING  
DIAGRAM  
R
q
JC  
Continuous Drain Cur-  
rent R (Notes 1, 2)  
T = 25°C  
A
I
D
G
D
D
D
S
S
1
q
JA  
Steady  
State  
XXXXXX  
AYWZZ  
DFN8 5x6  
CASE 506EB  
Power Dissipation  
(Notes 1, 2)  
T = 25°C  
A
P
3.9  
900  
W
D
R
q
JA  
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
A
A
p
XXXXXX = Specific Device Code  
A
Y
= Assembly Location  
= Year  
Operating Junction and Storage Temperature  
Range  
T , T  
−55 to  
+150  
°C  
J
stg  
W
ZZ  
= Work Week  
= Lot Traceability  
Single Pulse Drain−to−Source Avalanche  
E
776  
260  
mJ  
AS  
Energy (I  
= TBD A, L = TBD mH)  
L(pk)  
Lead Temperature Soldering Reflow for Solder-  
ing Purposes (1/8″ from case for 10 s)  
T
°C  
L
ORDERING INFORMATION  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
†
Device  
Package  
Shipping  
NTMFSS1D1N06CLT1G SO−8FL  
(Pb−Free)  
1500 / Tape  
& Reel  
THERMAL RESISTANCE MAXIMUM RATINGS  
Parameter  
Symbol  
Value  
0.75  
39  
Unit  
NTMFSS1D1N06CLT3G SO−8FL  
(Pb−Free)  
5000 / Tape  
& Reel  
Junction−to−Case − Steady State (Note 2)  
Junction−to−Ambient − Steady State (Note 2)  
R
°C/W  
q
JC  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
R
q
JA  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2. Surface−mounted on FR4 board using a 1 in pad size, 2 oz. Cu pad.  
2
This document contains information on a product under development. ON Semiconductor  
reserves the right to change or discontinue this product without notice.  
© Semiconductor Components Industries, LLC, 2018  
1
Publication Order Number:  
September, 2018 − Rev. P0  
NTMFSS1D1N06CL/D  
 
1234

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