Datasheet > NTMFSS0D9N03P8

NTMFSS0D9N03P8

更新时间： 2024-11-07 11:14:39

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	253K
描述
MOSFET, Power Source Down, 30V Single N-Channel

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NTMFSS0D9N03P8 数据手册

DATA SHEET

www.onsemi.com

MOSFET - Power, Single

N-Channel, Source-Down

30 V, 1.0 mW, 294 A

MAX

I MAX

(BR)DSS

DS(ON)

1.0 mW @ 10 V

1.2 mW @ 4.5 V

30 V

294 A

NTMFSS0D9N03P8

Features

D (1,2,3,4)

• Advance 5x6 mm Package with Source Down and Center Gate Design

to Improve Power Density, Efficiency, and Thermal Performance

• Low R

to Minimize Conduction Losses

• Low Q and Capacitance to Minimize Driver Losses

DS(on)

G (5)

• These Devices are Pb−Free, Halogen−Free / BFR Free and are RoHS

Compliant

S (6,7,8,9)

N−CHANNEL MOSFET

Typical Applications

• ORing

• Motor Drives

• Power Load Switch

• DC−DC

MARKING

DIAGRAM

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

9N03P8

AYWZZ

TDFN9 5x6

CASE 520AE

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

DSS

Gate−to−Source Voltage

= Assembly Location

= Year Code

= Work Week Code

Continuous Drain

= 25°C

= 85°C

= 25°C

= 85°C

294

212

125

Current R

(Note 2)

= Assembly Lot Code

Steady

State

Power Dissipation

(Note 2)

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the

package dimensions section on page 5 of this data sheet.

Continuous Drain

Current R

T = 25°C

T = 85°C

(Notes 1, 2)

Steady

State

Power Dissipation

T = 25°C

3.0

1.6

TBD

(Notes 1, 2)

T = 85°C

Pulsed Drain Current

T = 25°C, t = 10 ms

Operating Junction and Storage Temperature

Range

T , T

−55 to

+150

°C

stg

Single Pulse Drain−to−Source Avalanche

304

260

Energy (I

= 45 A, L = 0.3 mH)

L(pk)

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

1.0

Unit

Junction−to−Case − Steady State (Note 2)

Junction−to−Ambient − Steady State (Note 2)

°C/W

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 1 in pad size, 2 oz. Cu pad.

3. Maximum current for pulses as long as 1 second is higher but is dependent

on pulse duration and duty cycle.

Publication Order Number:

February, 2022 − Rev. 2

NTMFSS0D9N03P8/D

12 3 4 5 6

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