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NTMFSC0D8N04XMTWG PDF预览

NTMFSC0D8N04XMTWG

更新时间: 2024-11-06 17:15:43
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
4页 241K
描述
MOSFET - Power, SingleN-Channel, DUAL COOL40 V, 0.78mΩ, 310 A

NTMFSC0D8N04XMTWG 数据手册

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DATA SHEET  
www.onsemi.com  
MOSFET - Power, Single  
N-Channel, DUAL COOL)  
40 V, 0.78 mW, 310 A  
V
R
MAX  
I MAX  
D
SSS  
SS(ON)  
40 V  
0.78 mW @ 10 V  
310 A  
Product Preview  
NTMFSC0D8N04XM  
Features  
Advanced DualSided Cooling Package  
Latest 40 V Power MOSFET Technology for Motor Drive  
DFN8 5x6  
CASE 506EG  
Applications  
Extreme Lower OnResistance to Minimize Conduction Losses  
Lower Gate Charge to Minimize Gate Driving and Switching Losses  
MARKING DIAGRAM  
Soft Body Diode Reverse Recovery  
These Devices are PbFree, Halogen Free and are RoHS Compliant  
Typical Applications  
3RAYWZ  
Motor Drive  
ORing FET  
Battery Protection  
MAXIMUM RATINGS (T = 25°C, Unless otherwise specified)  
J
3R  
A
Y
W
Z
= Specific Device Code  
= Assembly Location  
= Year  
= Work Week  
= Assembly Lot Code  
Parameter  
DraintoSource Voltage  
Symbol  
Value  
40  
Unit  
V
V
DSS  
GatetoSource Voltage  
V
GS  
20  
V
Continuous Drain  
I
D
310  
A
Current R  
(Note 2)  
q
NChannel MOSFET  
JC  
Steady  
State  
T
= 25°C  
C
Power Dissipation  
(Note 2)  
P
135  
52  
W
A
D
S
S
S
1
8
D
D
D
R
q
JC  
Continuous Drain  
Current R  
I
D
2
3
7
6
q
JA  
Steady  
State  
(Note 1, 2)  
T = 25°C  
A
Power Dissipation  
P
D
3.8  
W
R
(Note 1, 2)  
q
JA  
G
4
5
D
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
TBD  
TBD  
A
A
A
p
Pulsed Source Cur-  
rent (Body Diode)  
T = 25°C, t = 10 ms  
I
SM  
A
p
Operating Junction and Storage Temperature  
Range  
T , T  
55 to  
°C  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 3 of  
this data sheet.  
J
stg  
+175  
Source Current (Body Diode) R  
I
S
112  
A
q
JC  
Single Pulse DraintoSource Avalanche  
Energy (I = TBD A)  
E
AS  
TBD  
mJ  
L(pk)  
Lead Temperature Soldering Reflow for  
Soldering Purposes (1/8from case for 10 s)  
T
L
300  
°C  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
2
1. Surfacemounted on FR4 board using 1 in pad size, 1 oz Cu pad.  
2. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
This document contains information on a product under development. onsemi reserves  
the right to change or discontinue this product without notice.  
© Semiconductor Components Industries, LLC, 2023  
1
Publication Order Number:  
August, 2023 Rev. P0  
NTMFSC0D8N04XM/D  
 

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