DATA SHEET
www.onsemi.com
MOSFET - Power, DUAL
COOL) N-Channel, DFN8
120 V, 6.1 mW, 92 A
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
120 V
6.1 mW @ 10 V
92 A
N−CHANNEL MOSFET
NTMFSC006N12MC
Features
• Advanced Dual−sided Cooled Packaging
• Ulra Low R
DS(on)
• MSL1 Robust Packaging Design
Typical Applications
• Primary DC−DC FET
• Synchronous Rectifier
• DC−DC Conversion
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
120
20
Unit
V
MARKING DIAGRAM
V
DSS
Gate−to−Source Voltage
V
GS
V
Continuous Drain Cur- Steady
T
= 25°C
= 100°C
= 25°C
I
92
A
C
D
rent R
(Notes 1, 3)
State
q
JC
T
C
57
Power Dissipation
(Note 1)
T
C
P
104
41
W
A
D
D
R
q
JC
T
C
= 100°C
DFN8 5x6.15
CASE 506EG
Continuous Drain
Current R
Steady
State
T = 25°C
A
I
D
14
q
JA
T = 100°C
A
9
(Notes 1, 2, 3)
Power Dissipation
T = 25°C
A
P
2.7
1.1
1459
+150
86
W
MARKING DIAGRAM
R
(Notes 1, 2)
q
JA
T = 100°C
A
3RAYWZ
Pulsed Drain Current
T
C
= 25°C, t = 10 ms
I
DM
A
°C
A
p
Operating Junction / Storage Temperature Max
Source Current (Body Diode)
T , T
J stg
I
S
Single Pulse Drain−to−Source Avalanche
E
AS
114
mJ
Energy (I
= 53 A)
L(pk)
3R
A
Y
= Specific Device Code
= Assembly Location
= Year
Lead Temperature Soldering Reflow for Solder-
ing Purposes (1/8″ from case for 10 s)
T
L
260
°C
W
Z
= Work Week
= Assembly Lot Code
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
ORDERING INFORMATION
Parameter
Symbol
Value
1.2
Unit
†
Device
NTMFSC006N12MC
Package
Shipping
Junction−to−Case − Steady State
Junction−to−Case Top − Steady State
Junction−to−Ambient − Steady State (Note 2)
R
°C/W
q
JC
DFN8
(Pb−Free)
3000 / Tape
& Reel
R
1.53
45
q
JT
R
q
JA
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
2
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
January, 2023 − Rev. 3
NTMFSC006N12MC/D