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NTMFS6H848NLT1G

更新时间： 2024-11-06 11:12:07
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 222K
描述
Power MOSFET, Single N-Channel, 80V, 59A, 8.8 mOhm

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NTMFS6H848NLT1G 数据手册

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MOSFET - Power, Single  
N-Channel  
80 V, 8.8 mW, 59 A  
NTMFS6H848NL  
Features  
www.onsemi.com  
• Small Footprint (5x6 mm) for Compact Design  
• Low R  
to Minimize Conduction Losses  
DS(on)  
• Low Q and Capacitance to Minimize Driver Losses  
G
V
R
MAX  
I MAX  
D
• These Devices are Pb−Free and are RoHS Compliant  
(BR)DSS  
DS(ON)  
8.8 mW @ 10 V  
11 mW @ 4.5 V  
80 V  
59 A  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
80  
Unit  
V
V
DSS  
Gate−to−Source Voltage  
V
GS  
20  
V
D (5,6)  
Continuous Drain  
Current R  
T
= 25°C  
= 100°C  
= 25°C  
I
59  
A
C
D
q
JC  
T
C
42  
(Notes 1, 3)  
Steady  
State  
Power Dissipation  
T
C
P
73  
W
A
D
G (4)  
R
(Note 1)  
q
JC  
T
C
= 100°C  
37  
Continuous Drain  
Current R  
T = 25°C  
A
I
D
13  
S (1,2,3)  
N−CHANNEL MOSFET  
q
JA  
T = 100°C  
A
9.0  
3.7  
1.8  
319  
(Notes 1, 2, 3)  
Steady  
State  
Power Dissipation  
T = 25°C  
A
P
W
D
R
(Notes 1, 2)  
q
JA  
T = 100°C  
A
MARKING  
DIAGRAM  
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
A
A
p
D
Operating Junction and Storage Temperature  
Range  
T , T  
−55 to  
°C  
J
stg  
1
S
S
S
G
D
D
+ 175  
DFN5  
(SO−8FL)  
CASE 488AA  
STYLE 1  
XXXXXX  
AYWZZ  
Source Current (Body Diode)  
I
S
61  
A
Single Pulse Drain−to−Source Avalanche  
E
AS  
267  
mJ  
Energy (I  
= 3.4 A)  
D
L(pk)  
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
L
260  
°C  
XXXXXX = 6H848L  
XXXXXX = (NTMFS6H848NL)  
A
Y
W
ZZ  
= Assembly Location  
= Year  
= Work Week  
= Lot Traceability  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
THERMAL RESISTANCE MAXIMUM RATINGS  
Parameter  
Symbol  
Value  
2.0  
Unit  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information in the  
package dimensions section on page 5 of this data sheet.  
Junction−to−Case − Steady State  
Junction−to−Ambient − Steady State (Note 2)  
R
°C/W  
q
JC  
R
41  
q
JA  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
3. Maximum current for pulses as long as 1 second is higher but is dependent  
on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2019  
1
Publication Order Number:  
December, 2019 − Rev. 0  
NTMFS6H848NL/D  
 
1234567

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